Chinese Journal of Lasers, Volume. 46, Issue 2, 0203002(2019)

Crystallization Quality and Optical Properties of High Strain InxGa1-xAs Film

Yubin Kang*, Jilong Tang, Jian Zhang, Xuan Fang, Dan Fang, Dengkui Wang, Fengyuan Lin, and Zhipeng Wei
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology,Jilin, Changchun 130022, China
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    Figures & Tables(4)
    RHEED diffraction pattern during growth. (a) Deoxidation processing of GaAs substrate; (b) growth of GaAs buffer layer; (c) growth of InxGa1-xAs film by adding In component; (d) growth of InxGa1-xAs film
    Optical photograph of InxGa1-xAs film and corresponding XRD image. (a) Optical photograph; (b) XRD image
    PL spectra of InxGa1-xAs film at room temperature, inset shows energy band diagram corresponding to luminescence at room temperature
    Raman spectra of InxGa1-xAs film and GaAs substrate at room temperature
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    Yubin Kang, Jilong Tang, Jian Zhang, Xuan Fang, Dan Fang, Dengkui Wang, Fengyuan Lin, Zhipeng Wei. Crystallization Quality and Optical Properties of High Strain InxGa1-xAs Film[J]. Chinese Journal of Lasers, 2019, 46(2): 0203002

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    Paper Information

    Category: materials and thin films

    Received: Aug. 31, 2018

    Accepted: Oct. 14, 2018

    Published Online: May. 9, 2019

    The Author Email:

    DOI:10.3788/CJL201946.0203002

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