Chinese Journal of Lasers, Volume. 46, Issue 2, 0203002(2019)
Crystallization Quality and Optical Properties of High Strain In
Fig. 1. RHEED diffraction pattern during growth. (a) Deoxidation processing of GaAs substrate; (b) growth of GaAs buffer layer; (c) growth of InxGa1-xAs film by adding In component; (d) growth of InxGa1-xAs film
Fig. 2. Optical photograph of InxGa1-xAs film and corresponding XRD image. (a) Optical photograph; (b) XRD image
Fig. 3. PL spectra of InxGa1-xAs film at room temperature, inset shows energy band diagram corresponding to luminescence at room temperature
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Yubin Kang, Jilong Tang, Jian Zhang, Xuan Fang, Dan Fang, Dengkui Wang, Fengyuan Lin, Zhipeng Wei. Crystallization Quality and Optical Properties of High Strain In
Category: materials and thin films
Received: Aug. 31, 2018
Accepted: Oct. 14, 2018
Published Online: May. 9, 2019
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