Single crystal InxGa1-xAs film is grown on a GaAs (100) substrate through molecular beam epitaxy (MBE) growth technique, and the growth of InxGa1-xAs film is monitored in real time by a reflective high energy electron diffractometer (RHEED). The InxGa1-xAs film is characterized by X-ray diffraction (XRD), and the InxGa1-xAs exhibits a high-quality film with the In component (atomic fraction) of 0.51. The luminescence peak at room temperature is found to be around 1.55 μm by photoluminescence (PL) spectroscopy, and the blue shift of the spectrum is observed due to the existence of compression strain in the InxGa1-xAs film. The Raman spectra show that the peak of the GaAs-like transverse (TO) optic phonon mode is obviously broadened, which proves that the strain exists in the ternary alloy InxGa1-xAs film.