Journal of Infrared and Millimeter Waves, Volume. 42, Issue 2, 197(2023)
A 33~170 GHz cascode amplifier based on InP DHBT technology
Figures & Tables(10)
Fig. 2. Schematic cross-sectional view of (a) multilayer interconnect, and (b) thin-film microstrip lines
Fig. 6. Chip photograph of the cascode amplifier MMIC. Size：1.0 mm × 0.8 mm
Fig. 7. Measured and simulated S-parameters of the broadband amplifier MMIC On-wafer bias：Vb1=1.5 V，Vb2/Vc=2.5 V
Table 1. Layer structure of the InGaAs/InP DHBT
View tableView in ArticleTable 1. Layer structure of the InGaAs/InP DHBT
Layer Material Thickness/nm Dopant InP substrate 100 µm S.I. Emitter contact InGaAs 200 Si Emitter InP 200 Si Base InGaAs 35 C Setback layer InGaAs 30 Si Step-graded InGaAsP 50 Si δ-doping InP 5 Si Collector InP 150 Si Collector contact InGaAs 50 Si Sub-collector InP 200 Si
Table 2. State-of-the-art of ultra-broadband amplifier
View tableView in ArticleTable 2. State-of-the-art of ultra-broadband amplifier
Ref. . f/GHz Technology Gain /dB Gain Flatness/dB Topology/ Devices Chip-size /mm2 Pout/dBm ［ 1 ］40~185 500 nm InP DHBT 10 ±2 Distributed
×10
0.8×0.75 10 ［ 4 ］0~110 100 nm GaAs pHEMT 6 ±2.5 Cascode
×2
- - ［ 5 ］123~143 130 nm SiGe BiCMOS 24.3 - Cascode
×10
0.7×0.43 7.7 ［ 6 ］110~170 SiGe BiCMOS 10.8 ±2.5 Cascode
×2
0.035 - ［ 7 ］118~236 35 nm GaAs mHEMT 10 - Cascode
×8
1.5×0.5 10 This work 33 ~170 500 nm InP DHBT 10 ±2 Cascode
×2
1.0 ×0.8 1.8
Tools
Get Citation
Copy Citation Text
Bo-Wu WANG, Wei-Hua YU, Yan-Fei HOU, Qin YU, Yan SUN, Wei CHENG, Ming ZHOU. A 33~170 GHz cascode amplifier based on InP DHBT technology[J]. Journal of Infrared and Millimeter Waves, 2023, 42(2): 197
Paper Information
Category: Research Articles
Received: Jul. 2, 2022
Accepted: --
Published Online: Jul. 19, 2023
The Author Email: Ming ZHOU (zright@sina.com)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20