Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability

Yating Wan; Daisuke Inoue; Daehwan Jung; Justin C. Norman; Chen Shang; Arthur C. Gossard; John E. Bowers

doi:10.1364/PRJ.6.000776

Photonics Research, Volume. 6, Issue 8, 776(2018)

Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability On the Cover

Yating Wan^1、†,*, Daisuke Inoue^1,2、†, Daehwan Jung^1、†, Justin C. Norman³, Chen Shang³, Arthur C. Gossard^3,4, and John E. Bowers^3,4

Author Affiliations

¹Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA

²Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan

³Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

⁴Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

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Yating Wan, Daisuke Inoue, Daehwan Jung, Justin C. Norman, Chen Shang, Arthur C. Gossard, John E. Bowers, "Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability," Photonics Res. 6, 776 (2018)

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Paper Information

Category: Quantum Optics

Received: Apr. 13, 2018

Accepted: Jun. 6, 2018

Published Online: Aug. 1, 2018

The Author Email: Yating Wan (yatingwan@ucsb.edu)

DOI:10.1364/PRJ.6.000776

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology