Acta Optica Sinica, Volume. 39, Issue 10, 1005001(2019)

Grating-Type Mid-Infrared Absorber Based on Hexagonal Boron Nitride Material

Yuefei Chen1, Wenrui Xue1、*, Chen Zhao1, Chen Zhang1, and Changyong Li2,3
Author Affiliations
  • 1School of Physics and Electronic Engineering, Shanxi University, Taiyuan, Shanxi 0 30006, China
  • 2State Key Laboratory of Quantum Optics and Photonic Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, Shanxi 0 30006, China
  • 3Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 0 30006, China
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    Figures & Tables(6)
    Structural schematic of grating-type absorber
    Relationship between dielectric constant of h-BN and wavelength. (a) Relationship between real part of dielectric constant of h-BN and wavelength; (b) relationship between imaginary part of dielectric constant of h-BN and wavelength
    Contour map of absorption versus incident angle and wavelength under optimized structural parameters
    Magnetic field distributions of unit structure at different incident wavelengths under normal incidence of TM. (a) 6.5 μm; (b) 10.5 μm; (c) 12.5 μm; (d) 13.8 μm
    Relative changes of absorption curves when geometrical parameters of the structure are changed and other parameters remain unchanged. (a) L; (b) P; (c) T1; (d) T2; (e) W1; (f) W2
    • Table 1. Parameters in the expression of dielectric constant of h-BN material

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      Table 1. Parameters in the expression of dielectric constant of h-BN material

      Axial componentεiωLO,i /cm-1ωTO,i /cm-1γi /cm-1
      εxx,εyy4.95177876735.0
      21610136729.0
      εzz4.1018287838.0
      21595151080.0
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    Yuefei Chen, Wenrui Xue, Chen Zhao, Chen Zhang, Changyong Li. Grating-Type Mid-Infrared Absorber Based on Hexagonal Boron Nitride Material[J]. Acta Optica Sinica, 2019, 39(10): 1005001

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    Paper Information

    Category: Diffraction and Gratings

    Received: Apr. 30, 2019

    Accepted: Jun. 12, 2019

    Published Online: Oct. 9, 2019

    The Author Email: Xue Wenrui (wrxue@sxu.edu.cn)

    DOI:10.3788/AOS201939.1005001

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