Electronic Transport Properties of Sn-Doped &#946;-Ga<sub>2</sub>O<sub>3</sub> (010) Thin Films Grown by MBE Homoepitaxial Growth

ZHANG Ziqi; YANG Zhenni; KUANG Siliang; WEI Shenglong; XU Wenjing; CHEN Duanyang; QI Hongji; ZHANG Hongliang

doi:10.16553/j.cnki.issn1000-985x.2024.0279

Journal of Synthetic Crystals, Volume. 54, Issue 2, 244(2025)

Electronic Transport Properties of Sn-Doped β-Ga₂O₃ (010) Thin Films Grown by MBE Homoepitaxial Growth

ZHANG Ziqi¹, YANG Zhenni^1,2, KUANG Siliang^1,2, WEI Shenglong¹, XU Wenjing^1,2, CHEN Duanyang^3、*, QI Hongji^2,3, and ZHANG Hongliang¹

Author Affiliations

¹State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China

²Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, China

³Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

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ZHANG Ziqi, YANG Zhenni, KUANG Siliang, WEI Shenglong, XU Wenjing, CHEN Duanyang, QI Hongji, ZHANG Hongliang. Electronic Transport Properties of Sn-Doped β-Ga₂O₃ (010) Thin Films Grown by MBE Homoepitaxial Growth[J]. Journal of Synthetic Crystals, 2025, 54(2): 244

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Paper Information

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Received: Nov. 7, 2024

Accepted: Mar. 31, 2025

Published Online: Mar. 31, 2025

The Author Email: CHEN Duanyang (chenduanyang@siom.ac.cn)

DOI:10.16553/j.cnki.issn1000-985x.2024.0279

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology