[1] [1] Chang Yanhe, Jin Chunshui, Li Chun, et al.. Laser induced damage of fluoride coatings at 193 nm[J]. Acta Optica Sinica, 2013, 40(7): 0707001.

[2] [2] Zhao Yang, Gong Yan. Design of beam shaping unit for deep ultraviolet lithographic illumination system[J]. Optics and Precision Engineering, 2011, 19(1): 29-34.

[3] [3] Gong Yan, Zhang Wei. Present status and progress in 193 nm exposure system in lithography[J]. Chinese Journal of Optics and Applied Optics, 2008, 1(1): 25-35.

[4] [4] Yang Lihong, Wang Tao, Su Junhong, et al.. Influence of laser conditioning on the damage properties of HfO2 thin film[J]. Acta Optica Sinica, 2013, 33(12): 1231001.

[5] [5] Jin Jingcheng, Jin Chunshui, Deng Wenyuan. Measuring absorption of 193 nm thin-film by laser calorimetry and system calibratiob[J]. Analytical Instrumentation, 2011, (1): 59-64.

[6] [6] Yang Guanghua, Li Yanqiu. Thermal and structural deformation of projection optics and its influence on optical imagine performance for 22 nm extreme ultraviolet lithography[J]. Acta Optica Sinica, 2012, 32(3): 0322005.

[7] [7] ISO 11551:2003(E), Test Method for Absorptance of Optical Laser Components[S]. Geneva:International organization for standardization, 2003.

[8] [8] Li Bincheng, Xiong Shengming. Measueing weak absorptance of optical thin films with laser calorimetric technique[J]. Chinese J Lasers, 2006, 33(6): 823-826.

[9] [9] Liu Hao, Ma Ping. Uncertainty analysis of laser calorimetry[J]. Journal of Applied Optics, 2011, 32(5): 942-948.

[10] [10] Apel O, Mann K, Marowsky G. Nonlinear thickness dependence of two-photon absorptance in Al2O3 films[J]. Appl Phys A, 2000, 71(5): 593-596.

[11] [11] Christian Mühlig, Simon Bublitz, Siegfried Kufert. Nonlinear absorption in single LaF3 and MgF2 layers at 193 nm measured by surface sensitive laser induced deflection technique[J]. Applied Optics, 2009, 48(35): 6781-6787.

[12] [12] Uwe Willamowski, Detlev Ristau, Eberhard Welsch. Measuring the absolute absorptance of optical laser components[J]. Applied Optics, 1998, 37(36): 8362-8370.

[13] [13] Balasa I, Blaschke H, Jensen L, et al.. Impact of SiO2 and CaF2 surface composition on the absolute absorption at 193 nm[C]. SPIE, 2011, 8190: 81901T.

[14] [14] Weijing Liu, Bincheng Li. Repetition rate dependence of absorption of fused silica irradiated at 193 nm[J]. Chin Opt Lett, 2013, 11(5): 053002.

[15] [15] Ute Natura, Rolf Martin, Gordon von der Goenna, et al.. Kinetics of laser induced changes of characteristic optical properties in lithosilwith 193 nm excimer laser exposure[C]. SPIE, 2005, 5754: 1312.

[16] [16] Blaschke H, Ristau D, Welsh E, et al.. Absolute measurements of non-linear absorption near LIDT at 193nm[C]. SPIE, 2001, 4347: 447-453.

[17] [17] Shang Shuzhen, Shao Jianda, Fan Zhengxiu, et al.. The study of ultraviolet properties of resistant boat evaporated LaF3 films[J]. Acta Physica Sinica, 2008, 57(3): 1941-1945.

[18] [18] Xue Chunrong, Shao Jianda. Properties of AlF3 and LaF3 films at 193 nm[C]. SPIE, 2010, 7655: 76553G-765536-11.

[19] [19] Liu Mingchung, Kaneko M, Nakahicra K, et al.. Microstructure and composition related characteristics of LaF3 thin films at 193 nm[J]. Optical Engineering, 2006, 45(8): 083801.