Ultraviolet photodetection technology is another dual-use detection technology after infrared detection and laser detection technology, which has broad application prospects. Vacuum photomultiplier tubes and Si-based photodiodes are common commercial UV detectors, but vacuum photomultiplier tubes are susceptible to high temperatures and electromagnetic radiation, and need to work under high pressure while Si-based photodiodes require expensive filters. Wide bandgap semiconductor ultraviolet photodetectors have overcome some of the problems faced by the above two devices, and are becoming the research hotspot. Among them, wide bandgap oxide materials have attracted extensive attention, due to the advantages of easy preparation for high response and high gain devices, and rich micro-structures and nano-structures. In this paper, ultraviolet photodetectors based on micro/nano-structured wide bandgap semiconductor oxide are combed, and some related researches in recent years are reviewed. The oxide materials involved include ZnO, Ga₂O₃, SnO₂ and TiO₂, etc. and the device structures involved include metal-semiconductor-metal devices, Schottky junction devices and heterojunction devices, etc.