Journal of Semiconductors, Volume. 40, Issue 3, 032301(2019)

Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes

Xuejiao Sun1,2, Zhiguo Yu1, Ning Zhang1,2, Lei Liu1,2, Junxi Wang1,2, Jinmin Li1,2, and Yun Zhang1,2
Author Affiliations
  • 1Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(4)
    (Color online) The device structures of the (a) conventional plane LEDs and (b) LEDs with nanotextured reflectors.
    (Color online) (a) Optical image and (b) scanning electron microscopy (SEM) image of an AAO template on the conventional plane LED wafer. The white region corresponds to the AAO template. (c) SEM images of nanotextured ITO layer and (d) nanotextured metallic reflector.
    (Color online) (a) Light output power as a function of the injection current for conventional plane LEDs and LEDs with metal nanotextured reflectors. (b) I–V characteristics of LEDs with and without metal reflectors. The inset shows the local amplification of the I–V curves with the voltage below the turn-on voltage.
    (Color online) (a) The reflectivity spectrum and optical images of Ag and Al nanotextured reflectors. (b) Absorption spectrum of Ag and Al nanotextured reflectors simulated using three-dimensional finite-difference time-domain. (c) SP field distribution (|E|2) near the surface of the Ag and Al nanotextured reflectors. (d) Schematic of interaction between light and metallic reflector.
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    Xuejiao Sun, Zhiguo Yu, Ning Zhang, Lei Liu, Junxi Wang, Jinmin Li, Yun Zhang. Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes[J]. Journal of Semiconductors, 2019, 40(3): 032301

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    Paper Information

    Category: Articles

    Received: Oct. 22, 2018

    Accepted: --

    Published Online: Sep. 18, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/3/032301

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