Journal of Semiconductors, Volume. 40, Issue 3, 032301(2019)
Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes
Fig. 1. (Color online) The device structures of the (a) conventional plane LEDs and (b) LEDs with nanotextured reflectors.
Fig. 2. (Color online) (a) Optical image and (b) scanning electron microscopy (SEM) image of an AAO template on the conventional plane LED wafer. The white region corresponds to the AAO template. (c) SEM images of nanotextured ITO layer and (d) nanotextured metallic reflector.
Fig. 3. (Color online) (a) Light output power as a function of the injection current for conventional plane LEDs and LEDs with metal nanotextured reflectors. (b)
Fig. 4. (Color online) (a) The reflectivity spectrum and optical images of Ag and Al nanotextured reflectors. (b) Absorption spectrum of Ag and Al nanotextured reflectors simulated using three-dimensional finite-difference time-domain. (c) SP field distribution (|
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Xuejiao Sun, Zhiguo Yu, Ning Zhang, Lei Liu, Junxi Wang, Jinmin Li, Yun Zhang. Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes[J]. Journal of Semiconductors, 2019, 40(3): 032301
Category: Articles
Received: Oct. 22, 2018
Accepted: --
Published Online: Sep. 18, 2021
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