Fig. 1. Schematic of VCSEL

Fig. 2. Top view of device structure after oxidation obtained with optical microscope and schematic of mesa structure. (a) Compensating mesa structure with mesa diameter of 27 μm and circular oxide aperture; (b) compensating mesa structure with mesa diameter of 23 μm and circular oxide aperture; (c) compensating mesa structure with mesa diameter of 21 μm and circular oxide aperture; (d) circular mesa structure with mesa diameter of 27 μm and circular oval aperture; (e) circular mesa structure with mesa

Fig. 3. Variable temperature threshold current curves for different VCSEL devices. (a) Device with different oxide aperture shapes; (b) device with different mesa diameters

Fig. 4. Temperature dependence of peak wavelength for device B

Fig. 5. Side mode suppression ratio of VCSELs devices with different oxide aperture shapes but same mesa diameter

Fig. 6. Side mode suppression ratio of VCSELs with circle oxide aperture but different mesa diameters