[1] [1] Lennart AtternAaGs, Lars Thylén. Single-layer antireflection coating of semiconductor lasers: polarization properties and the influence of the laser structure [J]. J. Lightwave Technol., 1989, 7(2):426～430

[2] [2] C. E. Zah, C. Caneau, F. K. Shokoohi et al.. 1.3 μm GaInAsP near-traveling-wave laser amplifiers made by combination of angled facets and antireflection coatings [J]. Electron. Lett., 1988, 24(20):1275～1276

[3] [3] Katsuaki Magari, Minoru Okamoto, Yasuhiro Suzuki et al.. Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structure [J]. IEEE J. Quantum Electron., 1994, 30(3):695～702

[4] [4] C. Y. J. Chu, H. Ghafouri-Shiraz. Analysis of gain and saturation characteristics of a semiconductor laser optical amplifier using transfer matrices [J]. J. Lightwave Technol., 1994, 12(8):1378～1385

[5] [5] T. Saitoh, T. Mukai. Theoretical analysis and fabrication of antireflection coatings on laser-diode facets [J]. J. Lightwave Technol., 1985, 3(2):288～292

[6] [6] M. Born, E. Wolf. Principle of Optics [M]. 5th Ed.. New york: Pergamon, 1975. 55～62