Journal of Infrared and Millimeter Waves, Volume. 41, Issue 4, 659(2022)

Photoelectrochemical properties of sputtered n-type CdTe thin films

Meng CAO1,2, Bin YU1, Xiang ZHANG2, Cheng-Gang XU2, Shan ZHANG3, Li-Ying SUN4、*, Xiao-Hong TAN2, Yu-Cheng JIANG5, Jia-Wei DOU2, and Lin-Jun WANG2,6
Author Affiliations
  • 1State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment,China Nuclear Power Engineering Co.,Ltd.,Shenzhen 518172,China
  • 2School of Materials Science and Engineering,Shanghai University,Shanghai,200072,China
  • 3Key Laboratory of infrared imaging materials and detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai,200083,China
  • 4Intensive Care Unit,Yangpu District Shidong Hospital,,Shanghai 200438,China
  • 5School of Physical Science and Technology,Suzhou University of Science and Technology,Suzhou 215009,China
  • 6Zhejiang Institute of Advanced Materials,SHU,Jiashan314113,China
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    Figures & Tables(12)
    Surficial and sectional SEM images of n-type CdTe thin film with deposition time(a)15 min,(b)20 min,(c)25 min,(d)30 min,(e)20 min,(f)30 min.
    XRD patterns of n-typeCdTe thin film with deposition time(a)15 min,(b)20 min,(c)25 min,(d)30 min
    Diffuse reflection spectra of n-type CdTe thin film with deposition time(a)UV-Vis diffuse reflection spectra,(b)band-gap spectra
    XPS spectrum of n-type CdTe thin film(a)full spectrum,(b)Cd3d,(c)TeO2,(d)Te3d
    PEC properties of n-type CdTe thin film measured in different solution(a)I-V,(b)I-T
    PEC properties of n-type CdTe thin film deposited with different time(a)I-V,(b)I-T.
    (a)Schematic diagram of equivalent circuit of electrolytic cell,(b)schematic diagram of simplified equivalent circuit,(c)simple schematic diagram of Nyqusit diagram calculation Ru,Rct,Cd;PEC curves of n-type CdTe thin film deposited with different time(d)Nyquist spectrum,(e)MS spectrum
    PEC properties of n-type CdTe thin film annealed with different temperatures in a vacuum(a)I-V,(b)I-T
    PEC properties of n-type CdTe thin film annealed in different conditions(a)I-V,(b)I-T.
    EDS mapping of O in n-type CdTe thin film annealed in different conditions(a)annealed in vacuum,(b)CdCl2 coated n-type CdTe annealed in vacuum,(c)annealed in N2 atmosphere
    • Table 1. performance parameters of CdTe thin film with different deposition time

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      Table 1. performance parameters of CdTe thin film with different deposition time

      Deposition time/minThickness/nmCompositional ratios of Cd:TeBandgap/eVPhotocunrent densitiy/μA/cm2Rct

      the flat band

      potential/V

      1511651.06:48.941.5548354.930.357
      2021851.33:48.671.53130376.110.363
      2533851.24:48.761.52148341.550.380
      3055751.51:48.491.51146417.200.377
    • Table 2. PEC properties of different annealing conditions

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      Table 2. PEC properties of different annealing conditions

      Annealing conditionVacuum 350℃Vacuum 375℃Vacuum 400℃

      N2

      annealing

      CdCl2

      annealing

      photocurrent densitiy/(μA/cm2158183225152301
      Compositional ratios of Cd:Te49.08:50.9248.47:51.5347.47:52.5345.36:54.6453.55:46.45
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    Meng CAO, Bin YU, Xiang ZHANG, Cheng-Gang XU, Shan ZHANG, Li-Ying SUN, Xiao-Hong TAN, Yu-Cheng JIANG, Jia-Wei DOU, Lin-Jun WANG. Photoelectrochemical properties of sputtered n-type CdTe thin films[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 659

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    Paper Information

    Category: Research Articles

    Received: Oct. 8, 2021

    Accepted: --

    Published Online: Dec. 13, 2022

    The Author Email:

    DOI:10.11972/j.issn.1001-9014.2022.04.001

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