Chinese Journal of Lasers, Volume. 35, Issue s2, 328(2008)
Effect of 3/SiH4 Flow Rate Ratio on the Performance of Polysilicon/SiN Composite Solar Cell
[1] [1] Guan Saomao, Wang Xun. Technology of Surface Passivation on Semiconduct and Its Application[M]. Beijing: National Defence Industry Press, 1981. 23~40
[2] [2] Schmidt J, Kerr M. Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride[J]. Solar Energy Materials & Solar Cells, 2001, 65: 585~588
[3] [3] Que Ruiling. Silicon Materials Scence and Technology[M]. Hangzhou: Zhejiang University Press, 2000. 45~88
[4] [4] Yang Hong, Wang He, Chen Guangde et al.. Passivation of SiN of polycrystal solar cell[J]. Semiconductor Information, 2001, (6): 39~41
[5] [5] Yelundur V, Rohatgi A, Jeong J W et al.. PECVD SiNx induced hydrogen passivation in string ribbon silicon[C]. 28th IEEE Photovoltaic Specialists Conference, 2000. 91~96
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Zhao Haofeng, Wang Ling, Xie Aigeng, Yan Kai, Wu Hongyan, Liu Bin, Huang Tingli, Xiao Yuhui. Effect of 3/SiH4 Flow Rate Ratio on the Performance of Polysilicon/SiN Composite Solar Cell[J]. Chinese Journal of Lasers, 2008, 35(s2): 328