Chinese Journal of Lasers, Volume. 35, Issue s2, 328(2008)

Effect of 3/SiH4 Flow Rate Ratio on the Performance of Polysilicon/SiN Composite Solar Cell

Zhao Haofeng*, Wang Ling, Xie Aigeng, Yan Kai, Wu Hongyan, Liu Bin, Huang Tingli, and Xiao Yuhui
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    References(5)

    [1] [1] Guan Saomao, Wang Xun. Technology of Surface Passivation on Semiconduct and Its Application[M]. Beijing: National Defence Industry Press, 1981. 23~40

    [2] [2] Schmidt J, Kerr M. Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride[J]. Solar Energy Materials & Solar Cells, 2001, 65: 585~588

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    [4] [4] Yang Hong, Wang He, Chen Guangde et al.. Passivation of SiN of polycrystal solar cell[J]. Semiconductor Information, 2001, (6): 39~41

    [5] [5] Yelundur V, Rohatgi A, Jeong J W et al.. PECVD SiNx induced hydrogen passivation in string ribbon silicon[C]. 28th IEEE Photovoltaic Specialists Conference, 2000. 91~96

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    Zhao Haofeng, Wang Ling, Xie Aigeng, Yan Kai, Wu Hongyan, Liu Bin, Huang Tingli, Xiao Yuhui. Effect of 3/SiH4 Flow Rate Ratio on the Performance of Polysilicon/SiN Composite Solar Cell[J]. Chinese Journal of Lasers, 2008, 35(s2): 328

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    Paper Information

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    Received: --

    Accepted: --

    Published Online: Jan. 5, 2009

    The Author Email: Haofeng Zhao (neuhfz@163.com)

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