Researching | High Power Single‑Mode Semiconductor Laser Based on High‑Order Sidewall Grating

Chinese Journal of Lasers, Volume. 52, Issue 17, 1701008(2025)

High Power Single‑Mode Semiconductor Laser Based on High‑Order Sidewall Grating

Naiyu Zhang¹, Bocang Qiu^2,3、**, Yonggang Zou¹, Jie Fan¹, Fang Gang², and Xiaohui Ma^1、*

Author Affiliations

¹State Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130020, Jilin , China

²School of Electronics and Communication Engineering, Quanzhou University of Information Engineering, Quanzhou 362000, Fujian , China

³Xi’an Lumcore Optoelectronics Technologies, Xi’an 710077, Shaanxi , China

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References(30)

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Naiyu Zhang, Bocang Qiu, Yonggang Zou, Jie Fan, Fang Gang, Xiaohui Ma. High Power Single‑Mode Semiconductor Laser Based on High‑Order Sidewall Grating[J]. Chinese Journal of Lasers, 2025, 52(17): 1701008

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Paper Information

Category: laser devices and laser physics

Received: Apr. 15, 2025

Accepted: May. 15, 2025

Published Online: Sep. 15, 2025

The Author Email: Bocang Qiu (qiubc@lumcore.com), Xiaohui Ma (mxh@cust.edu.cn)

DOI:10.3788/CJL250704

CSTR:32183.14.CJL250704

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology