High-performance mid-wavelength InAs avalanche photodiode using AlAs<sub>0.13</sub>Sb<sub>0.87</sub> as the multiplication layer

Jianliang Huang; Chengcheng Zhao; Biying Nie; Shiyu Xie; Dominic C. M. Kwan; Xiao Meng; Yanhua Zhang; Diana L. Huffaker; Wenquan Ma

doi:10.1364/PRJ.385177

Photonics Research, Volume. 8, Issue 5, 755(2020)

High-performance mid-wavelength InAs avalanche photodiode using AlAs_0.13Sb_0.87 as the multiplication layer

Jianliang Huang^1,2, Chengcheng Zhao^1,2, Biying Nie^1,2, Shiyu Xie^3,4、*, Dominic C. M. Kwan³, Xiao Meng³, Yanhua Zhang^1,2, Diana L. Huffaker³, and Wenquan Ma^1,2,5、*

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Physics and Astronomy, Cardiff University, Cardiff, UK

⁴e-mail: XieS1@cardiff.ac.uk

⁵e-mail: wqma@semi.ac.cn

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Jianliang Huang, Chengcheng Zhao, Biying Nie, Shiyu Xie, Dominic C. M. Kwan, Xiao Meng, Yanhua Zhang, Diana L. Huffaker, Wenquan Ma, "High-performance mid-wavelength InAs avalanche photodiode using AlAs_0.13Sb_0.87 as the multiplication layer," Photonics Res. 8, 755 (2020)

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Paper Information

Category: Optoelectronics

Received: Dec. 4, 2019

Accepted: Feb. 22, 2020

Published Online: Apr. 26, 2020

The Author Email: Shiyu Xie (XieS1@cardiff.ac.uk), Wenquan Ma (wqma@semi.ac.cn)

DOI:10.1364/PRJ.385177

Topics

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