[1] [1] Zhang Juan, Liu Liren, Zhou Yu, et al. Design of a new type interleaver［J］. Acta Optica Sinica, 2003, 23(12): 1424-1428.

[2] [2] Cui Ming, Han Jun, Deng Jun, et al. Epitaxial growth of 980 nm vertical cavity surface emitting laser［J］. Semiconductor Optoelectronics, 2015, 36(1): 38-41.

[3] [3] Chang Y C, Wang C S, Coldren L A. High-efficiency, high-speed VCSEL with 35 Gbit/s error-free operation［J］. Electronics Letters, 2007, 43(19): 1022-1023.

[4] [4] Shi Jingjing, Tian Zhenhua, Qin Li, et al. 850 nm high-power vertical-cavity surface-emitting lasers［J］. Journal of Optoelectronics·Laser, 2010, 21(10): 1445-1448.

[5] [5] Huang Shouwen, Chen Jianjun, Xia Guangqiong, et al. Polarization bistability characteristics of 1550 nm vertical-cavity surface-emitting laser under optoelectronic feedback［J］. Laser & Optoelectronics Progress, 2016, 53 (7): 071405.

[6] [6] Tian Kun, Zou Yonggang, Jiang Xiaowei, et al. Wavelength tuning range of inter cavity subwavelength grating MEMS VCSELs［J］. Chinese J Lasers, 2016, 43(7): 0701009.

[7] [7] Li Xiushan, Ning Yongqiang, Cui Jinjiang, et al. Polarization properties of rectangle-shape VCSEL with asymmetrical current injection［J］. Laser & Optoelectronics Progress, 2015, 52(7): 071402.

[8] [8] Zhang Yan, Ning Yongqiang, Zhang Jinsheng, et al. Structural design of 808 nm InGaAlAs vertical-cavity surface-emitting laser［J］. Chinese J Lasers, 2011, 38(9): 0902007.

[9] [9] Wang Lijun, Ning Yongqiang, Qin Li, et al. Development of high power diode laser［J］. Chinese Journal of Luminescence, 2015, 36(1):1-19.

[10] [10] Shi J, Chi K, Chang J, et al. Single-mode vertical-cavity surface-emitting laser array with high power and narrow far-field divergence angle［J］. IEEE Photonics Journal, 2013, 5(6): 1502508.

[11] [11] Shi Jingjing, Qin Li, Ning Yongqiang, et al. 850 nm vertical cavity surface-emitting laser arrays［J］. Optics and Precision Engineering, 2012, 20(1): 17-23.