Optoelectronic Technology, Volume. 41, Issue 3, 218(2021)

Drawing Design Optimization of IGZO TFT

Guozhi WANG, Yong LIU, Jian WANG, Wei ZHU, and Zhoushuo CHU
Author Affiliations
  • CCPD Display Technology Co. LTD.,Chengdu 610200, CHN
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    Figures & Tables(17)
    Bottom gate of anti-overlapping TFT structure
    The design drawings of HT
    The design of channel drawing 5 mask and 4 mask
    The critical value of HT zone
    The influence trend of L and a on the value of b
    Film thickness trend
    The SEM picture of channel area after photoetching
    The SEM picture of channel area after ashing
    The influence trend of L on the value of c
    The picture of channel area after photoetching
    The SEM picture of channel area after etching
    The picture of channel area after etching and stripping
    • Table 1. The channel length and compensation values for TFT

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      Table 1. The channel length and compensation values for TFT

      NO.W/μmL/μma/μm
      12030
      22040
      32050
      42060
      520100
      620200
      720300
      820400
      920100.5
      1020101.0
      1120101.5
      1220102.0
    • Table 2. The effect of channel length L and compensation value a for the indentation of photoresist

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      Table 2. The effect of channel length L and compensation value a for the indentation of photoresist

      NO.W/μmL/μma/μmb/μm
      12030-1.340
      22040-1.538
      32050-1.734
      42060-1.885
      520100-2.126
      620200-2.144
      720300-2.151
      820400-2.143
      920100.5-1.092
      1020101.0-0.049
      1120101.50.843
      1220102.01.606
    • Table 3. The thickness of photoresist in TFT channel

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      Table 3. The thickness of photoresist in TFT channel

      NO.W/μmL/μma/μmT/nmt/nm
      120302 042.521 448.52
      220402 038.161 074.12
      320502 043.59821.65
      420602 039.97696.58
      5201002 045.24492.42
      6202002 040.76466.35
      7203002 047.78446.47
      8204002 043.63434.28
    • Table 4. The effect of channel length L for the trail of photoresist

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      Table 4. The effect of channel length L for the trail of photoresist

      NO.W/μmL/μma/μmL1/μmc/μm
      1203003.000
      220400.6773.323
      320501.2372.763
      420603.7742.226
      5201008.1281.872
      62020018.1761.824
      72030028.1691.831
      82040038.1881.812
    • Table 5. The channel length and width values after etching and stripping

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      Table 5. The channel length and width values after etching and stripping

      AVG5.1510.82
      U/(%)5.342.73
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    Guozhi WANG, Yong LIU, Jian WANG, Wei ZHU, Zhoushuo CHU. Drawing Design Optimization of IGZO TFT[J]. Optoelectronic Technology, 2021, 41(3): 218

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    Paper Information

    Category: Research and Trial-manufacture

    Received: Mar. 5, 2021

    Accepted: --

    Published Online: Oct. 26, 2021

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2021.03.011

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