Laser & Optoelectronics Progress, Volume. 59, Issue 17, 1716004(2022)

Conversion Characteristics and Damage of GaAs Solar Cells Irradiated by 532 nm Continuous Laser

Huican Ouyang, Lin Shang, Chaoming Xu, Song Liu, Xin Huang, Biao Huang, Dou Wang, and Bingshe Xu*
Author Affiliations
  • Science & Technology Institute of Atomic and Molecular Science of Materials, Shaanxi University, Xi’an 710000, Shaanxi , China
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    Figures & Tables(7)
    Optical path diagram of the experimental system
    Structure of the GaAs solar cell. (a) Schematic diagram of the structure; (b) physical map
    I-V curve of the GaAs solar cell
    Photoelectric properties of GaAs solar cells. (a) Short circuit current; (b) open circuit voltage; (c) maximum output power; (d) photoelectric conversion efficiency
    Performance and material characterization of GaAs solar cells before and after laser irradiation. (a) I-V curve of GaAs solar cell; (b) XRD of GaAs solar cell
    SEM image of the laser-irradiated area of a GaAs solar cell. (a)‒(d) Area 1‒ area 4
    Luminescent properties of GaAs solar cells. (a) PL image of GaAs solar cell; (b) EL image of irradiated area; (c) PL image of unirradiated area; (d) PL image of irradiated area
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    Huican Ouyang, Lin Shang, Chaoming Xu, Song Liu, Xin Huang, Biao Huang, Dou Wang, Bingshe Xu. Conversion Characteristics and Damage of GaAs Solar Cells Irradiated by 532 nm Continuous Laser[J]. Laser & Optoelectronics Progress, 2022, 59(17): 1716004

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    Paper Information

    Category: Materials

    Received: Aug. 10, 2021

    Accepted: Sep. 8, 2021

    Published Online: Aug. 22, 2022

    The Author Email: Bingshe Xu (xubingshe@sust.edu.cn)

    DOI:10.3788/LOP202259.1716004

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