A new manufacturing method for the pyramid sensor using mask moving lithography (MML) process is proposed. Firstly,there is one time moving mask exposure in both two orthogonal directions,and then a pyramidal structure is formed in the photoresist after development. Secondly,the structure will be transferred into the substrate of silicon. Lastly,metallization is carried out to increase the reflectivity of the pyramidal mirror. The completed pyramidal mirror has a square base of 1 mm length and mirror-like for side-facets inclined to the base at 3.7° with knife edges and sharpening tip. The sizes of pyramid tip and turned edges are both at about 6 μm ,and the root mean square (RMS) of the four mirror-like facets is approximately 77 nm.