Chinese Journal of Lasers, Volume. 6, Issue 11, 40(1979)

Annealing of Sn implanted GaAs by pulsed ruby laser

Wu Henxian1, Liu Liren1, Zhao Xinan2, and Xin Shanghen2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(7)

    [1] [1] G. Battaglin et al.; Phys. Stat. Sol. (a), 49, 374 (1978).

    [2] [2] G. Foti et al., Lett. N: Cimento, 20, 89 (1978).

    [3] [3] Β. T. Young et at.; Appl. Phys. Lett., 32, 139 (1978).

    [4] [4] J. Krymicki et al., J. Eudiger. Phys. Lett., 61 A, 181 (1977).

    [5] [5] G. Foti et al.; J. Appl. Phys.; 49(4), 2559 (1978).

    [6] [6] B. J. Sealy et al.; Proc. ion beam modification of materials, Budapest (1978).

    [7] [7] Woodcock, H. Butler; Proc. ion beam modification of materials, Budapest (1978).

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    Wu Henxian, Liu Liren, Zhao Xinan, Xin Shanghen. Annealing of Sn implanted GaAs by pulsed ruby laser[J]. Chinese Journal of Lasers, 1979, 6(11): 40

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    Paper Information

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    Received: Feb. 24, 1979

    Accepted: --

    Published Online: Aug. 2, 2012

    The Author Email:

    DOI:

    CSTR:32186.14.

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