Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale

A. Pandey; J. Min; Y. Malhotra; M. Reddeppa; Y. Xiao; Y. Wu; Z. Mi

doi:10.1364/PRJ.473318

Photonics Research, Volume. 10, Issue 12, 2809(2022)

Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale Spotlight on Optics

A. Pandey, J. Min, Y. Malhotra, M. Reddeppa, Y. Xiao, Y. Wu, and Z. Mi^*

Author Affiliations

Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

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A. Pandey, J. Min, Y. Malhotra, M. Reddeppa, Y. Xiao, Y. Wu, Z. Mi, "Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale," Photonics Res. 10, 2809 (2022)

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Paper Information

Category: Optoelectronics

Received: Aug. 16, 2022

Accepted: Oct. 16, 2022

Published Online: Nov. 24, 2022

The Author Email: Z. Mi (ztmi@umich.edu)

DOI:10.1364/PRJ.473318

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology