A comprehensive review of the 1/f noise research progress in advanced Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) was presented. Interfacial states, device structure, material defects, quantum effects and many other factors could affect 1/f noise. With the continuous reduction of process size and the application of high k dielectric, as well as the influence of hot carrier effect, radiation damage and other factors, the origin of 1/f noise in MOSFET had been a huge disagreement and controversy in the academic circle. Only when the real physical origin of 1/f noise was clarified, could it be effectively improved through the process to support the design application.