Journal of Semiconductors, Volume. 45, Issue 10, 102401(2024)

Single-fundamental-mode cryogenic (3.6 K) 850-nm oxide-confined VCSEL

Anjin Liu1,2、*, Chenxi Hao1,2, Jingyu Huo3, Hailong Han3, Minglu Wang1,2, Bao Tang4, Lingyun Li3, Lixing You3, and Wanhua Zheng2,5
Author Affiliations
  • 1Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 4Accelink technologies co., Ltd, Wuhan 430205, China
  • 5Key Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    Figures & Tables(4)
    (Color online) (a) Cross-sectional schematic of the cryogenic VCSEL structure. (b) Packaged cryogenic VCSEL mounted in a cryostat.
    (Color online) Schematic of the temperature-dependent misalignment between the gain peak and the F−P dip.
    (Color online) (a) Measured L−I−V curves of the cryogenic VCSEL at RT (298 K). (b) Measured L−I−V curve of the cryogenic VCSEL at 3.6 K. (c) Lasing spectra of the cryogenic VCSEL at 5 mA within the temperature range from 298 to 3.6 K. (d) Lasing spectra of the cryogenic VCSEL under different currents at 3.6 K. (e) Wavelengths of the fundamental mode of the cryogenic VCSEL at 5 mA under different temperatures. (f) Wavelengths of the fundamental mode of the cryogenic VCSEL at 3.6 K under different currents.
    (Color online) (a) Small signal responses S21 of the VCSEL at RT (298 K). The inset shows the VCSEL chip mounted on a carrier with GSG pads. (b) Small signal responses S21 of the VCSEL at 292 K.
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    Anjin Liu, Chenxi Hao, Jingyu Huo, Hailong Han, Minglu Wang, Bao Tang, Lingyun Li, Lixing You, Wanhua Zheng. Single-fundamental-mode cryogenic (3.6 K) 850-nm oxide-confined VCSEL[J]. Journal of Semiconductors, 2024, 45(10): 102401

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    Paper Information

    Category: Research Articles

    Received: Jul. 25, 2024

    Accepted: --

    Published Online: Dec. 5, 2024

    The Author Email: Anjin Liu (AJLiu)

    DOI:10.1088/1674-4926/24070025

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