Journal of Semiconductors, Volume. 45, Issue 10, 102401(2024)
Single-fundamental-mode cryogenic (3.6 K) 850-nm oxide-confined VCSEL
Fig. 1. (Color online) (a) Cross-sectional schematic of the cryogenic VCSEL structure. (b) Packaged cryogenic VCSEL mounted in a cryostat.
Fig. 2. (Color online) Schematic of the temperature-dependent misalignment between the gain peak and the F−P dip.
Fig. 3. (Color online) (a) Measured L−I−V curves of the cryogenic VCSEL at RT (298 K). (b) Measured L−I−V curve of the cryogenic VCSEL at 3.6 K. (c) Lasing spectra of the cryogenic VCSEL at 5 mA within the temperature range from 298 to 3.6 K. (d) Lasing spectra of the cryogenic VCSEL under different currents at 3.6 K. (e) Wavelengths of the fundamental mode of the cryogenic VCSEL at 5 mA under different temperatures. (f) Wavelengths of the fundamental mode of the cryogenic VCSEL at 3.6 K under different currents.
Fig. 4. (Color online) (a) Small signal responses S21 of the VCSEL at RT (298 K). The inset shows the VCSEL chip mounted on a carrier with GSG pads. (b) Small signal responses S21 of the VCSEL at 292 K.
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Anjin Liu, Chenxi Hao, Jingyu Huo, Hailong Han, Minglu Wang, Bao Tang, Lingyun Li, Lixing You, Wanhua Zheng. Single-fundamental-mode cryogenic (3.6 K) 850-nm oxide-confined VCSEL[J]. Journal of Semiconductors, 2024, 45(10): 102401
Category: Research Articles
Received: Jul. 25, 2024
Accepted: --
Published Online: Dec. 5, 2024
The Author Email: Anjin Liu (AJLiu)