Optoelectronic Technology, Volume. 42, Issue 4, 248(2022)

Development of Field Assisted Photocathode

Jiangnan YUE1, Yuqing LI1, Xinlong CHEN2, Pengxiao XU2, Wenjuan DENG1, Xincun PENG1, and Jijun ZOU1、*
Author Affiliations
  • 1State Key Laboratory of Nuclear Resources and Environment, School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 33003,CHN
  • 2The 55th Research Institute of China Electronics Technology Group Corporation,Nanjing 10016,CHN
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    The development of field-assisted photocathode was reviewed, and the working principle of field-assisted photocathode was introduced. Three representative cathode structures were summarized systematically, which were InP/InGaAsP/InP, InP/InGaAs and InGaAs/InAsP/InP photocathode. InP/InGaAsP/InP double heterojunction was a research highlight in field-assisted photocathode research, and this structure was mostly used in 1.3 μm field-assisted photocathode; InGaAs heterojunction structure had high sensitivity and fast response time compared with other structures, which was conducive to the application of fringe image converter tube; the photocathode with InGaAs/InAsP/InP structure provided a graded InAsP layer between InP and InGaAs, which was very beneficial to prolong the wavelength threshold. By analyzing the characteristics and applications of different structures, the development direction and difficulties of field-assisted photocathodes were discussed.

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    Jiangnan YUE, Yuqing LI, Xinlong CHEN, Pengxiao XU, Wenjuan DENG, Xincun PENG, Jijun ZOU. Development of Field Assisted Photocathode[J]. Optoelectronic Technology, 2022, 42(4): 248

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    Paper Information

    Category: Study Report

    Received: Jun. 15, 2022

    Accepted: --

    Published Online: Dec. 23, 2022

    The Author Email: ZOU Jijun (jjzou@ecut.edu.cn)

    DOI:10.19453/j.cnki.1005-488x.2022.04.002

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