Journal of Semiconductors, Volume. 40, Issue 6, 062002(2019)
Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrödinger's equation
Figures & Tables(5)
Fig. 1. (Color online) (a) The device structure of the n-channel GNR-TFET. (b) The conduction band of the GNR-TFET after self-consistency achieved.
Fig. 2. (Color online) (a) The tunneling currents as a function of drain voltage for various gate voltages, (b) The tunneling currents as a function of gate voltage for various drain voltages.
Fig. 3. (Color online) (a) The tunneling currents as a function of drain voltage for various oxide thickness for Schrödinger and Dirac-like equation, (b) The tunneling currents as a function of drain voltage for various oxide thickness for Dirac-like equation.
Fig. 4. (Color online) (a) The tunneling currents as a function of drain voltage for various AGNR widths. (b) The tunneling currents as a function of gate voltage for various temperatures.
Fig. 5. (Color online) (a) Characteristics of tunneling currents on gate voltages resulting from the calculation of Dirac-like equations for variations in Fermi velocity (b) Comparison of tunneling current calculated by Schrödinger equation, Dirac-like equation and an experiment by Wang, 2008.
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Endi Suhendi, Lilik Hasanah, Dadi Rusdiana, Fatimah A. Noor, Neny Kurniasih, Khairurrijal. Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrödinger's equation[J]. Journal of Semiconductors, 2019, 40(6): 062002
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Category: Articles
Received: Jan. 31, 2019
Accepted: --
Published Online: Sep. 18, 2021
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