Laser & Optoelectronics Progress, Volume. 56, Issue 4, 040603(2019)

Influence of High-Order Sideband on High-Frequency Millimeter Wave System

Xindi Huang1,2, Jia Lu1,2、*, Yang Wang1,2, Jianfei Liu1,2, and Xiangye Zeng1,2
Author Affiliations
  • 1 School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
  • 2 Tianjin Key Laboratory of Electronic Materials & Devices, Tianjin 300401, China;
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    References(23)

    [7] Brehm G E. Trends in microwave/millimeter-wave front-end technology. [C]∥2006 European Microwave Integrated Circuits Conference, September 10-13, 2006, Manchester, UK. New York: IEEE, 282734(2006).

    [9] Brokmeier A, Geist T, Puchinger J. A way to modern and cost effective packaging for RF frontends for use from microwave through millimeter wave frequencies. [C]∥Microwave Conference,September 28-30, Paris, France. New York: IEEE:, 609-611(2010).

    [16] Lu J. Research on the application of four-wave mixing in Radio-over-Fiber system and all-optical wavelength conversion[D]. Changsha: Hunan University, 22-28(2011).

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    Xindi Huang, Jia Lu, Yang Wang, Jianfei Liu, Xiangye Zeng. Influence of High-Order Sideband on High-Frequency Millimeter Wave System[J]. Laser & Optoelectronics Progress, 2019, 56(4): 040603

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    Paper Information

    Category: Fiber Optics and Optical Communications

    Received: Aug. 10, 2018

    Accepted: Sep. 5, 2018

    Published Online: Jul. 31, 2019

    The Author Email: Jia Lu (lujia8299@163.com)

    DOI:10.3788/LOP56.040603

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