Acta Physica Sinica, Volume. 69, Issue 11, 114201-1(2020)
Figures & Tables(13)
Fig. 1. Schematic of the structure of a thin film coated on a transparent silica glass substrate.
Fig. 2. Transmittance curve of Si-H thin film on finite glass substrate.
Fig. 3. Comparison of refractive index and dispersion of thin film obtained by six different models.
Fig. 4. Relation between the refractive index and the dispersion obtained by six dispersion models (include MCM) and the true value as a function of wavelength: (a) Δ
Fig. 5. Comparison of five filtering methods to reduce noise: (a) Adjacent averaging method; (b) Savitaky-Golay method; (c) percentile filter method; (d) FFT filter method; (e) piecewise fitting method.
Fig. 6. Transmission curve with upper and lower tangent envelopes obtained by using the improved Swanepoel method: (a) Ge20Sb15Se65 film; (b) Ge28Sb12Se60 film.
Fig. 7. Refractive index and dispersion of Ge-Sb-Se films: (a) Refractive index
Fig. 8. Absorption characteristics of Ge-Sb-Se films: (a) Absorption coefficient
Table 1. [in Chinese]
View tableView in ArticleTable 1. [in Chinese]
名称 模型 Cauchy $n = A + \dfrac{B}{{{\lambda ^2}}} + \dfrac{C}{{{\lambda ^4}}}$ 二阶归一化标准Sellmeier $n = \sqrt {1 + \dfrac{{A \cdot {\lambda ^2}}}{{{\lambda ^2} - B}} + \dfrac{{C \cdot {\lambda ^2}}}{{{\lambda ^2} - D}}} $ 三阶归一化标准Sellmeier $n = \sqrt {1 + \dfrac{{A \cdot {\lambda ^2}}}{{{\lambda ^2} - B}} + \dfrac{{C \cdot {\lambda ^2}}}{{{\lambda ^2} - D}} + \dfrac{{E \cdot {\lambda ^2}}}{{{\lambda ^2} - F}}} $ 二阶非标准形式的Sellmeier $n = \sqrt {A + \dfrac{{B \cdot {\lambda ^2}}}{{{\lambda ^2} - C}} + D \cdot {\lambda ^2}} $ Conrady $n = A + \dfrac{B}{\lambda } + \dfrac{C}{{{\lambda ^{3.5}}}}$ Herzberger $n = A + B \cdot {\lambda ^2} + C \cdot {\lambda ^2} + \dfrac{D}{{\left( {{\lambda ^2} - 0.028} \right)}} + \dfrac{E}{{{{\left( {{\lambda ^2} - 0.028} \right)}^2}}}$
Table 2.
Values of λ, TM, and Tm obtained in
Fig. 2 and the values of n and d calculated by the improved Swanepoel method由
图2 中数据获得的λ, TM和Tm的值以及通过改进后的Swanepoel方法计算的n和d值View tableView in ArticleTable 2.
Values of λ, TM, and Tm obtained in
Fig. 2 and the values of n and d calculated by the improved Swanepoel method由
图2 中数据获得的λ, TM和Tm的值以及通过改进后的Swanepoel方法计算的n和d值λ TM Tm n d m0 m n0 d0 972.4 0.9202 0.5007 2.9173 6.001 6.0 2.9169 1000.0 911.2 0.9199 0.4904 2.9613 6.501 6.5 2.9611 1000.0 859.0 0.9193 0.4801 3.0066 1000.0 7.002 7.0 3.0062 1000.0 814.1 0.9183 0.4697 3.0527 1000.4 7.501 7.5 3.0526 1000.1 774.9 0.9165 0.4591 3.0996 1000.1 8.002 8.0 3.0993 1000.0 740.5 0.9134 0.4485 3.1471 999.5 8.502 8.5 3.1468 1000.0 710.0 0.9080 0.4376 3.1951 999.7 9.002 9.0 3.1947 1000.0 682.8 0.8984 0.4260 3.2435 999.4 9.502 9.5 3.2430 999.9 658.4 0.8818 0.4132 3.2921 1000.2 10.002 10.0 3.2917 1000.0 636.3 0.8530 0.3982 3.3410 999.3 10.503 10.5 3.3402 999.9 616.3 0.8050 0.3796 3.3898 999.6 11.003 11.0 3.3893 999.9 598.1 0.7252 0.3546 3.4335 1020.4 11.483 11.5 3.4387 1001.6 581.3 0.6127 0.3191 3.4878 1000.6 12.002 12.0 3.4874 1000.0 565.9 0.4595 0.2678 3.5368 981.9 12.502 12.5 3.5365 1000.0 551.7 0.2879 0.1965 3.5856 1001.6 13.001 13.0 3.5857 1000.1 注: $ \qquad \quad \overline d = 1000.2;{\sigma _1} = 7.58;\overline {{d_0}} = 1000.1;{\sigma _0} = 0.40$
Table 3.
Refractive index at multiple wavelengths of two thin films obtained by MCM.
多点柯西法获得的两种薄膜多个波长处的折射率
View tableView in ArticleTable 3.
Refractive index at multiple wavelengths of two thin films obtained by MCM.
多点柯西法获得的两种薄膜多个波长处的折射率
波长/nm Ge20Sb15Se65薄膜 Ge28Sb12Se60薄膜 Texp TM m n Texp TM m n 600 0.2449 0.2682 8.7331 2.6902 0.0009 0.0253 13.3793 2.8670 620 0.3463 0.4036 8.0131 2.6530 0.0417 0.0726 12.7620 2.8259 640 0.4987 0.5496 7.4160 2.6208 0.1107 0.0957 12.2073 2.7902 660 0.4749 0.6845 6.9106 2.5929 0.2449 0.2519 11.7057 2.7592 680 0.7724 0.7891 6.4760 2.5685 0.2914 0.3957 11.2495 2.7320 700 0.6566 0.8552 6.0972 2.5472 0.5222 0.5266 11.0259 2.7081 750 0.9088 0.9096 5.7634 2.5041 0.7469 0.7853 10.1068 2.6597 800 0.6160 0.9219 5.4665 2.4720 0.6155 0.9123 9.3455 2.6233 900 0.6199 0.9321 4.9602 2.4285 0.8667 0.9681 8.1494 2.5735 1000 0.7666 0.9388 4.5433 2.4014 0.7547 0.9735 7.2448 2.5420 1100 0.8085 0.9429 4.1932 2.3835 0.6124 0.9773 6.5316 2.5210 1200 0.7580 0.9455 3.8945 2.3711 0.9678 0.9805 5.9523 2.5062 1300 0.6850 0.9472 3.6364 2.3622 0.6186 0.9813 5.4709 2.4955 1400 0.9418 0.9480 3.4109 2.3556 0.9556 0.9806 5.0638 2.4875 1500 0.7814 0.9482 3.2121 2.3506 0.7282 0.9801 4.7145 2.4813 1600 0.6521 0.9479 3.0356 2.3466 0.6430 0.9800 4.4112 2.4765 1700 0.7244 0.9474 2.8776 2.3435 0.8853 0.9800 4.1452 2.4726 1800 0.8914 0.9470 3.1213 2.3410 0.9383 0.9801 3.9099 2.4694 1900 0.9384 0.9470 2.9544 2.3389 0.7164 0.9801 3.7002 2.4668 2000 0.8249 0.9476 2.8046 2.3372 0.6282 0.9800 3.5121 2.4647 2100 0.7121 0.9491 2.6694 2.3358 0.6868 0.9800 3.2838 2.4628 2200 0.6614 0.9518 2.5468 2.3345 0.8411 0.9801 3.1325 2.4613 2300 0.6679 0.9559 2.4349 2.3335 0.9705 0.9804 2.9947 2.4599 2400 0.7188 0.9617 2.3326 2.3326 0.9441 0.9809 2.8686 2.4588
Table 4.
Vibration modes in the Raman spectrum of Ge-Sb-Se system.
Ge-Sb-Se薄膜拉曼光谱中对应的振动模式
View tableView in ArticleTable 4.
Vibration modes in the Raman spectrum of Ge-Sb-Se system.
Ge-Sb-Se薄膜拉曼光谱中对应的振动模式
拉曼峰位/cm–1 振动模式 160 Se2Sb-SbSe2结构中的Sb—Sb同极键的振动 170 Ge2Se6/2结构中的Ge—Ge同极键的伸缩振动 197 SbSe3/2三角锥结构中的Sb—Se键的E1模式振动 203 共顶角GeSe4/2四面体中的Ge—Se键的V1模式振动 215 共边GeSe4/2四面体中的Ge—Se键振动 235 Sen环结构中的Se—Se键振动 256 Sen链结构中的Se—Se键振动 270 Ge-GemSe4-m结构中的Ge—Ge同极键的振动 303 GeSe4四面体的F2型不对称振动
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Lei Pan, Bao-An Song, Chuan-Fu Xiao, Pei-Qing Zhang, Chang-Gui Lin, Shi-Xun Dai.
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Received: Jan. 21, 2020
Accepted: --
Published Online: Dec. 2, 2020
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