Journal of Infrared and Millimeter Waves, Volume. 43, Issue 4, 457(2024)

Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice

Jin-Di PEI1, Xu-Liang CHAI1, Yu-Peng WANG1, and Yi ZHOU1,2、*
Author Affiliations
  • 1School of Physics and Optoelectronic Engineering,Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
  • 2Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
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    References(21)

    [4] Cui Rong, Yang Xiaohong, Lu Qianqian et al. Integration of the SOI waveguide with the InGaAs / InP photodetector[J]. Progress in Laser and Optoelectronics, 51, 24-33(2014).

    [15] Xuliang C. Research on the intermediate-wave interband cascade infrared detector[D](2023).

    [19] Lin Hongtao, Sun Boshu, Ma Hui et al. Overview of integrated optoelectronics on mid-infrared film (invited)[J]. Infrared and Laser Engineering, 51, 155-168(2022).

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    Jin-Di PEI, Xu-Liang CHAI, Yu-Peng WANG, Yi ZHOU. Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice[J]. Journal of Infrared and Millimeter Waves, 2024, 43(4): 457

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    Paper Information

    Category: Research Articles

    Received: Oct. 20, 2023

    Accepted: --

    Published Online: Aug. 27, 2024

    The Author Email: Yi ZHOU (zhouyi@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2024.04.004

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