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Journal of Semiconductors, Volume. 41, Issue 8, 080401(2020)

Photodetectors based on 2D material/Si heterostructure

Jingshu Zhou, Juehan Yang, and Zhongming Wei
Author Affiliations
  • State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    (Color online) (a) Schematic representations of the Si/MoS2 p–n heterojunction photodetector. (b) AFM image of MoS2 layer at metal contact and heterojunction interface[8]. Copyright © 2017, Springer Nature.

    Fig. 1. (Color online) (a) Schematic representations of the Si/MoS2 p–n heterojunction photodetector. (b) AFM image of MoS2 layer at metal contact and heterojunction interface[8]. Copyright © 2017, Springer Nature.

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    Jingshu Zhou, Juehan Yang, Zhongming Wei. Photodetectors based on 2D material/Si heterostructure[J]. Journal of Semiconductors, 2020, 41(8): 080401

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    Received: --

    Accepted: --

    Published Online: Sep. 10, 2021

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    DOI:10.1088/1674-4926/41/8/080401

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology