Infrared and Laser Engineering, Volume. 54, Issue 7, 20250123(2025)
Research progress in InP quantum dot luminescent materials: From synthesis to device applications (invited)
Fig. 2. Schematic diagram of the two-step nucleation mechanism of In3+ and P3− precursors, where MSC is a separable intermediate[19]
Fig. 3. (a) Schematic diagram of defect emission in InP quantum dots[21]; (b) Semiconductor materials with different lattice constants [21]; (c) Schematic diagram of the synthesis of multi-shell green-emitting InP/ZnSe/ZnS quantum dots [24]; (d) Schematic diagram of the preparation of InP cores and InP/ZnSe/ZnS quantum dots with different morphologies and shell thicknesses [2]; (e) Schematic diagram of the synthesis of green-emitting In(Zn)P/ZnSe/ZnSeS/ZnS quantum dots using a two-step heating method to prepare In(Zn)P cores [26]
Fig. 6. (a) Current density–luminance–voltage (J–L–V) characteristics; (b) EQE and current efficiency versus luminance characteristics; (c) Histogram of the maximum EQE; (d) Comparison of EQE with previously reported devices; (e) Operational lifetime of the device as a function of voltage and time; (f) T95 lifetime compared to other devices[63]
Fig. 7. (a) Comparison of PL and EL spectra of QD; (b) Luminance-current density characteristics of QLED; (c) Evolution of current efficiency and EQE as functions of voltage and current density, respectively; (d) Structural schematic of InP QDs with halogen ion passivationx; (e) Energy band diagram of quantum dot light-emitting diodes; (f) Comparative analysis of PL and EL spectral profiles in QD systems[66,68]
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Yao WANG, Qixin WENG, Yingzhang SHI, Zhiwen WANG, Yujie SONG, Xiao wei SUN, Wenda ZHANG. Research progress in InP quantum dot luminescent materials: From synthesis to device applications (invited)[J]. Infrared and Laser Engineering, 2025, 54(7): 20250123
Category: Special issue—Advanced display technology and applications
Received: Feb. 21, 2025
Accepted: --
Published Online: Aug. 29, 2025
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