Infrared and Laser Engineering, Volume. 54, Issue 7, 20250123(2025)

Research progress in InP quantum dot luminescent materials: From synthesis to device applications (invited)

Yao WANG1, Qixin WENG1, Yingzhang SHI1, Zhiwen WANG1, Yujie SONG1、*, Xiao wei SUN2、*, and Wenda ZHANG1
Author Affiliations
  • 1School of Chemistry and Chemical Engineering, Hainan University, Haikou 570228 China
  • 2Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
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    Figures & Tables(7)
    (a) Emission spectra of InP quantum dots synthesized by the In-TOP and conventional methods[15]; (b) Schematic diagram of synthesizing InP quantum dots of different sizes using indium halides (InI, InBr, InCl)[17]
    Schematic diagram of the two-step nucleation mechanism of In3+ and P3− precursors, where MSC is a separable intermediate[19]
    (a) Schematic diagram of defect emission in InP quantum dots[21]; (b) Semiconductor materials with different lattice constants [21]; (c) Schematic diagram of the synthesis of multi-shell green-emitting InP/ZnSe/ZnS quantum dots [24]; (d) Schematic diagram of the preparation of InP cores and InP/ZnSe/ZnS quantum dots with different morphologies and shell thicknesses [2]; (e) Schematic diagram of the synthesis of green-emitting In(Zn)P/ZnSe/ZnSeS/ZnS quantum dots using a two-step heating method to prepare In(Zn)P cores [26]
    (a) Schematic diagram of the structure of a forward InP-based QLED [42]; (b) Schematic diagram of the structure of an inverted InP-based QLED [42]; (c) Common energy levels of carrier materials [50]
    (a) Schematic diagram of the energy levels of the device structure[25]; (b) CE-EQE-L characteristic curve of the device[56]; (c) QLED structure and cross-sectional TEM image[2]; (d) EQE-luminance curve of the QLED device[2]
    (a) Current density–luminance–voltage (J–L–V) characteristics; (b) EQE and current efficiency versus luminance characteristics; (c) Histogram of the maximum EQE; (d) Comparison of EQE with previously reported devices; (e) Operational lifetime of the device as a function of voltage and time; (f) T95 lifetime compared to other devices[63]
    (a) Comparison of PL and EL spectra of QD; (b) Luminance-current density characteristics of QLED; (c) Evolution of current efficiency and EQE as functions of voltage and current density, respectively; (d) Structural schematic of InP QDs with halogen ion passivationx; (e) Energy band diagram of quantum dot light-emitting diodes; (f) Comparative analysis of PL and EL spectral profiles in QD systems[66,68]
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    Yao WANG, Qixin WENG, Yingzhang SHI, Zhiwen WANG, Yujie SONG, Xiao wei SUN, Wenda ZHANG. Research progress in InP quantum dot luminescent materials: From synthesis to device applications (invited)[J]. Infrared and Laser Engineering, 2025, 54(7): 20250123

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    Paper Information

    Category: Special issue—Advanced display technology and applications

    Received: Feb. 21, 2025

    Accepted: --

    Published Online: Aug. 29, 2025

    The Author Email:

    DOI:10.3788/IRLA20250123

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