Fig. 1. XRD results of Ga₂O₃ films. (a) XRD 2θ-ω curves of Ga₂O₃ films; (b)‒(f) XRCs of predominant Ga₂O₃ crystallographic orientation for samples T₅₀₀, T₅₃₀, T₅₈₀, T₆₃₀, and T₆₈₀, respectively

Fig. 2. Photograph of Ga₂O₃/c-sapphire and SEM surface morphology images. (a) Photograph of Ga₂O₃/c-sapphire grown in this study;

Fig. 3. Transmittance spectra and optical bandgap plots of Ga₂O₃^{films. (a) Transmittance spectra; (b) optical bandgap plots derived using Tauc formula; (c) bandgap variation of Ga₂O₃ films}

Fig. 4. XPS spectra of Ga₂O₃^{films. (a) Full scan spectrum of T₅₀₀; (b) high-resolution spectra of Ga 2p_1/2, Ga 2p_3/2 and Ga 3d; (c) high-resolution spectra of O 1s}

Fig. 5. Current density curves and calculated performance parameters of SBPDs. (a)‒(c) Current density curves as functions of voltage measured under 254 nm and 365 nm illumination and in the dark, labeled as I_{254 nm}, I_{365 nm}, and I_dark, respectively; (d) calculated P_DCR, R, D, E_QE and R_{254 nm}/R_{365 nm}

Fig. 6. Results of time-dependent current measurements of SBPD. (a) I-t curves of T₆₈₀ measured at 5 V bias; (b) measured and fitted I-t curves of T₆₈₀ conducted at 5 V bias and light power density of 600 μW/cm²; (c) variations of response time constants with growth temperature for SBPDs; (d) variations of response time constants with light power density for T₆₈₀