[1] Hung W, Chan C K, Chen L K et al. An optical network unit for WDM access networks with downstream DPSK and upstream remodulated OOK data using injection-locked FP laser[J]. IEEE Photonics Technology Letters, 15, 1476-1478(2003).

[2] Johnson R H, Kuchta D M. 30 Gb/s directly modulated 850 nm datacom VCSELs[C], CPDB2-9(2008).

[3] Kuchta D M, Rylyakov A V, Doany F E et al. A 71-Gb/s NRZ modulated 850-nm VCSEL-based optical link[J]. IEEE Photonics Technology Letters, 27, 577-580(2015).

[4] Lavrencik J, Varughese S, Ledentsov N et al. 168 Gbps PAM-4 multimode fiber transmission through 50 m using 28 GHz 850 nm multimode VCSELs[C], 8-12(2020).

[5] Zuo T J, Zhang T T, Zhang S et al. Single-lane 200-Gbps PAM-4 transmission for datacenter intra-connections employing 850-nm VCSEL[C], 24-27(2020).

[6] Nakahara K, Wakayama Y, Kitatani T et al. Direct modulation at 56 and 50 Gb/s of 1.3-µm InGaAlAs ridge-shaped-BH DFB lasers[J]. IEEE Photonics Technology Letters, 27, 534-536(2015).

[7] Sasada N, Nakajima T, Sekino Y et al. Wide-temperature-range (25 ℃ to 80 ℃) 53-Gbaud PAM4 (106-Gb/s) operation of 1.3-µm directly modulated DFB lasers for 10-km transmission[C], 23-27(2018).

[8] Wu X R, Kumar R, Huang D N et al. A single-chip high-speed silicon photonic transmitter with integrated laser and micro-ring modulator[C], 4-7(2023).

[9] St-Arnault C, Bernal S, Berikaa E et al. Net 1.6 Tbps (4×400 Gbps/λ) O-band IM/DD transmission over 2 km using uncooled DFB lasers on the LAN-WDM grid and sub-1V drive TFLN modulators[C], Th4C.6-28(2024).

[10] Hiraki T, Aihara T, Maeda Y et al. Over-67-GHz-bandwidth membrane InGaAlAs electro-absorption modulator integrated with DFB laser on Si platform[J]. Journal of Lightwave Technology, 41, 880-887(2023).

[11] Liang D, Zhang C, Roshan-Zamir A et al. A fully-integrated multi‑λ hybrid DML transmitter[C], 11-15(2018).

[12] Zhang C, Liang D, Kurczveil G et al. Hybrid quantum-dot microring laser on silicon[J]. Optica, 6, 1145-1151(2019).

[13] Pezeshki B, Rangarajan S, Tselikov A et al. 304 channel microLED based CMOS transceiver IC with aggregate 1 Tbps and sub-pJ per bit capability[C], 24-28(2024).

[14] Liu A J, Wolf P, Lott J A et al. Vertical-cavity surface-emitting lasers for data communication and sensing[J]. Photonics Research, 7, 121-136(2019).

[15] Mansuri M, Inti R, Kennedy J et al. A scalable 32‒56 Gb/s 0.56‒1.28 pJ/b voltage-mode VCSEL-based optical transmitter in 28-nm CMOS[J]. IEEE Journal of Solid-State Circuits, 57, 757-766(2022).

[16] Mondal S, Qiu J Y, Krishnamurthy S et al. 18.2 A 4×64Gb/s NRZ 1.3pJ/b co-packaged and fiber-terminated 4-Ch VCSEL-based optical transmitter[C], 340-342(2024).

[17] Zhu X Y, La X B, Guo Jet al. 1.3‑μm high‒speed directly‑modulated InGaAlAs/InP DFB laser with integrated DBR feedback region[J]. Chinese Journal of Lasers, 50, 1001001(2023).

[18] Yamaoka S, Diamantopoulos N P, Nishi H et al. Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate[J]. Nature Photonics, 15, 28-35(2021).

[19] Lange S, Wolf S, Lutz J et al. 100 GBd intensity modulation and direct detection with an InP-based monolithic DFB laser Mach‒Zehnder modulator[J]. Journal of Lightwave Technology, 36, 97-102(2018).

[20] Caillaud C, Adrover M A M, Blache F et al. Low cost 112 Gb/s InP DFB-EAM for PAM-4 2 km transmission[C](2015).

[21] Wade M, Anderson E, Ardalan S et al. An error-free 1 Tbps WDM optical I/O chiplet and multi-wavelength multi-port laser[C], 6-10(2021).

[22] Levy C S, Xuan Z, Sharma J et al. 8‑λ×50 Gbps/λ heterogeneously integrated Si-Ph DWDM transmitter[J]. IEEE Journal of Solid-State Circuits, 59, 690-701(2024).

[23] Liang D, Srinivasan S, Kurczveil G et al. An energy-efficient and bandwidth-scalable DWDM heterogeneous silicon photonics integration platform[J]. IEEE Journal of Selected Topics in Quantum Electronics, 28, 6100819(2022).

[24] Zheng H M, Yu K P, Li S C et al. Ultralow-loss silicon nitride integrated photonics: nonlinear optics and applications (invited)[J]. Acta Optica Sinica, 44, 1513018(2024).

[25] Rizzo A, Novick A, Gopal V et al. Massively scalable Kerr comb-driven silicon photonic link[J]. Nature Photonics, 17, 781-790(2023).

[26] Ahmed A H, El Moznine A, Lim D et al. A dual-polarization silicon-photonic coherent transmitter supporting 552 Gb/s/wavelength[J]. IEEE Journal of Solid-State Circuits, 55, 2597-2608(2020).

[27] Yang M, Yan G F, Zheng S et al. Single-carrier 800-Gb/s self-homodyne coherent transmission of DP-16QAM, DP-32QAM, and DP-64QAM with uncooled DFB laser[J]. Optics Express, 31, 27553-27565(2023).

[28] Berikaa E, Alam M S, Bernal S et al. Next-generation O-band coherent transmission for 1.6 Tbps 10 km intra-datacenter interconnects[J]. Journal of Lightwave Technology, 42, 1126-1135(2024).

[29] Eiselt N, Griesser H, Eiselt M et al. Real-time 200 Gb/s (4×56.25 Gb/s) PAM-4 transmission over 80 km SSMF using quantum-dot laser and silicon ring-modulator[C], 19-23(2017).

[30] Huang D, Xuan Z, Kumar R et al. A silicon photonic 8[C], 9-13(2023).

[31] Hosseini K, Kok E, Shumarayev S Y et al. 5.12 Tbps co-packaged FPGA and silicon photonics interconnect I/O[C], 260-261(2022).

[32] Massaro R D, Anderson J E, Nelson J D et al. A comparative study between frequency-modulated continous wave LADAR and linear LiDAR[J]. ISPRS-International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences, 1, 233-239(2014).

[33] Wong W X, Lee S Q, Lim W Y et al. Spectrally efficient SBS suppression via seed laser current modulation[J]. Proceedings of SPIE, 12865, 128650E(2024).

[34] Zheng J H, Jia L H, Zhai Y R et al. High-precision silicon-integrated frequency-modulated continuous wave LiDAR calibrated using a microresonator[J]. ACS Photonics, 9, 2783-2791(2022).

[35] Zhang L M, Gagino M, Millan-Mejia A et al. Directly modulated FMCW tunable laser with highly linear frequency chirp and narrow linewidth[J]. APL Photonics, 9, 106101(2024).

[36] Sayyah K, Sarkissian R, Patterson P et al. Fully integrated FMCW LiDAR optical engine on a single silicon chip[J]. Journal of Lightwave Technology, 40, 2763-2772(2022).

[37] Chin S, Holzer J, Groote A D et al. Development of hybrid photonic integrated wavelength-tunable laser at 2 µm and its application to FMCW LiDAR[J]. Optics Express, 32, 22470-22478(2024).

[38] Kita T, Tang R, Yamada H. Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range[J]. Applied Physics Letters, 106, 111104(2015).

[39] Verdier A, de Valicourt G, Brenot R et al. Ultrawideband wavelength-tunable hybrid external-cavity lasers[J]. Journal of Lightwave Technology, 36, 37-43(2018).

[40] Jiang C, Wang H P, Chen H M et al. Broadband quantum dot superluminescent diode with simultaneous three-state emission[J]. Nanomaterials, 12, 1431(2022).

[41] Kendrisic M, Agafonov V, Salas M et al. Thermally tuned VCSEL at 850 nm as a low-cost alternative source for full-eye SS-OCT[J]. Optics Letters, 48, 3079-3082(2023).

[42] Chen Z F, Lou J J, Zhang Y H et al. High-precision frequency locking system based on analog-to-digital convertor and asymmetric Mach‒Zehnder interferometer for the next generation coherent PON[J]. Journal of Lightwave Technology, 42, 5241-5248(2024).

[43] Suzuki J, Hasegawa K, Masuyama K et al. A Si photonics-based compact wavelength locker for small tunable laser modules[J]. IEEE Photonics Technology Letters, 36, 20-22(2024).

[44] Schawlow A L, Townes C H. Infrared and optical masers[J]. Physical Review, 112, 1940-1949(1958).

[45] Henry C. Theory of the linewidth of semiconductor lasers[J]. IEEE Journal of Quantum Electronics, 18, 259-264(1982).

[46] Harayama T, Shinohara S. Two-dimensional microcavity lasers[J]. Laser & Photonics Reviews, 5, 247-271(2011).

[47] He L N, Özdemir Ş K, Yang L. Whispering gallery microcavity lasers[J]. Laser & Photonics Reviews, 7, 60-82(2013).

[48] Streifer W, Burnham R, Scifres D. Effect of external reflectors on longitudinal modes of distributed feedback lasers[J]. IEEE Journal of Quantum Electronics, 11, 154-161(1975).

[49] Shin D K, Henson B M, Khakimov R I et al. Widely tunable, narrow linewidth external-cavity gain chip laser for spectroscopy between 1.0‒1.1 µm[J]. Optics Express, 24, 27403-27414(2016).

[50] Xu Y L, Maier P, Blaicher M et al. Hybrid external-cavity lasers (ECL) using photonic wire bonds as coupling elements[J]. Scientific Reports, 11, 16426(2021).

[51] Saito S, Nilsson O, Yamamoto Y. Oscillation center frequency tuning, quantum FM noise, and direct frequency characteristics in external grating loaded semiconductor lasers[J]. IEEE Journal of Quantum Electronics, 18, 961-970(1982).

[52] Chu T, Fujioka N, Nakamura S et al. Compact, low power consumption wavelength tunable laser with silicon photonic-wire waveguide micro-ring resonators[C], 20-24(2009).

[53] Keyvaninia S, Roelkens G, van Thourhout D et al. Demonstration of a heterogeneously integrated III‒V/SOI single wavelength tunable laser[J]. Optics Express, 21, 3784-3792(2013).

[54] Morton P A, Xiang C, Khurgin J B et al. Integrated coherent tunable laser (ICTL) with ultra-wideband wavelength tuning and sub-100 Hz Lorentzian linewidth[J]. Journal of Lightwave Technology, 40, 1802-1809(2022).

[55] Chen J J, Wei W Q, Qin J L et al. Multi-wavelength injection locked semiconductor comb laser[J]. Photonics Research, 10, 1840-1847(2022).

[56] Tran M A, Huang D N, Bowers J E. Tutorial on narrow linewidth tunable semiconductor lasers using Si/III‒V heterogeneous integration[J]. APL Photonics, 4, 111101(2019).

[57] Shams-Ansari A, Renaud D, Cheng R et al. Electrically pumped laser transmitter integrated on thin-film lithium niobate[J]. Optica, 9, 408-411(2022).

[58] Jones R, Doussiere P, Driscoll J B et al. Heterogeneously integrated InP/silicon photonics: fabricating fully functional transceivers[J]. IEEE Nanotechnology Magazine, 13, 17-26(2019).

[59] Guo J, McLemore C A, Xiang C et al. Chip-based laser with 1-hertz integrated linewidth[J]. Science Advances, 8, eabp9006(2022).

[60] Ruan Z L, Zhu Y T, Chen P X et al. Efficient hybrid integration of long-wavelength VCSELs on silicon photonic circuits[J]. Journal of Lightwave Technology, 38, 5100-5106(2020).

[61] Tong Y Y, Zhou W, Tsang H K. Efficient perfectly vertical grating coupler for multi-core fibers fabricated with 193 nm DUV lithography[J]. Optics Letters, 43, 5709-5712(2018).

[62] Zhang Z, Shan X T, Huang B J et al. Efficiency enhanced grating coupler for perfectly vertical fiber-to-chip coupling[J]. Materials, 13, 2681(2020).

[63] Vusirikala V, Saini S S, Bartolo R E et al. High butt-coupling efficiency to single-mode fibers using a 1.55-μm InGaAsP laser integrated with a tapered ridge mode transformer[J]. IEEE Photonics Technology Letters, 9, 1472-1474(1997).

[64] Shoji T, Tsuchizawa T, Watanabe T et al. Low loss mode size converter from 0.3 µm square Si wire waveguides to singlemode fibres[J]. Electronics Letters, 38, 1669-1670(2002).

[65] Almeida V R, Panepucci R R, Lipson M. Nanotaper for compact mode conversion[J]. Optics Letters, 28, 1302-1304(2003).

[66] Lee K K, Lim D R, Pan D et al. Mode transformer for miniaturized optical circuits[J]. Optics Letters, 30, 498-500(2005).

[67] Dhoore S, Uvin S, van Thourhout D et al. Novel adiabatic tapered couplers for active III‒V/SOI devices fabricated through transfer printing[J]. Optics Express, 24, 12976-12990(2016).

[68] Chang L, Pfeiffer M H P, Volet N et al. Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon[J]. Optics Letters, 42, 803-806(2017).

[69] Shen B, Lin H T, Merget F et al. Broadband couplers for hybrid silicon-chalcogenide glass photonic integrated circuits[J]. Optics Express, 27, 13781-13792(2019).

[70] Lamponi M, Keyvaninia S, Jany C et al. Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler[J]. IEEE Photonics Technology Letters, 24, 76-78(2012).

[71] Komljenovic T, Huang D N, Pintus P et al. Photonic integrated circuits using heterogeneous integration on silicon[J]. Proceedings of the IEEE, 106, 2246-2257(2018).

[72] Tran M A, Zhang C, Morin T J et al. Extending the spectrum of fully integrated photonics to submicrometre wavelengths[J]. Nature, 610, 54-60(2022).

[73] Sanchis P, Bienstman P, Luyssaert B et al. Analysis of butt coupling in photonic crystals[J]. IEEE Journal of Quantum Electronics, 40, 541-550(2004).

[74] Vivien L, Rouvière M, Fédéli J M et al. High speed and high responsivity germanium photodetector integrated in a silicon-on-insulator microwaveguide[J]. Optics Express, 15, 9843-9848(2007).

[75] Lindenmann N, Balthasar G, Hillerkuss D et al. Photonic wire bonding: a novel concept for chip-scale interconnects[J]. Optics Express, 20, 17667-17677(2012).

[76] Billah M R, Blaicher M, Hoose T et al. Hybrid integration of silicon photonics circuits and InP lasers by photonic wire bonding[J]. Optica, 5, 876-883(2018).

[77] Noriki A, Tamai I, Ibusuki Y et al. Mirror-based broadband silicon-photonics vertical I/O with coupling efficiency enhancement for standard single-mode fiber[J]. Journal of Lightwave Technology, 38, 3147-3155(2020).

[78] Tan M, Xu J, Liu S Y et al. Co-packaged optics (CPO): status, challenges, and solutions[J]. Frontiers of Optoelectronics, 16, 1(2023).

[79] Avrutin E A, Rafailov E U. Advances in mode-locked semiconductor lasers[M]. Semiconductors and Semimetals, 86, 93-147(2012).

[80] Zander M, Rehbein W, Moehrle M et al. High performance BH InAs/InP QD and InGaAsP/InP QW mode-locked lasers as comb and pulse sources[C], 8-12(2020).

[81] Lihachev G, Weng W L, Liu J Q et al. Platicon microcomb generation using laser self-injection locking[J]. Nature Communications, 13, 1771(2022).

[82] Anderson M H, Weng W L, Lihachev G et al. Zero dispersion Kerr solitons in optical microresonators[J]. Nature Communications, 13, 4764(2022).

[83] Bao C J, Zhang L, Matsko A et al. Nonlinear conversion efficiency in Kerr frequency comb generation[J]. Optics Letters, 39, 6126-6129(2014).

[84] Kim B Y, Okawachi Y, Jang J K et al. Turn-key, high-efficiency Kerr comb source[J]. Optics Letters, 44, 4475-4478(2019).

[85] Hu H, da Ros F, Pu M H et al. Single-source chip-based frequency comb enabling extreme parallel data transmission[J]. Nature Photonics, 12, 469-473(2018).

[86] Xu M Y, Zhu Y T, Pittalà F et al. Dual-polarization thin-film lithium niobate in-phase quadrature modulators for terabit-per-second transmission[J]. Optica, 9, 61-62(2022).

[87] Ren T H, Zhang M, Wang C et al. An integrated low-voltage broadband lithium niobate phase modulator[J]. IEEE Photonics Technology Letters, 31, 889-892(2019).

[88] Norman J C, Jung D, Wan Y T et al. Perspective: the future of quantum dot photonic integrated circuits[J]. APL Photonics, 3, 030901(2018).

[89] Xue Y, Liu J M. III‒V active devices on silicon-on-insulator via lateral selective heteroepitaxy (invited)[J]. Laser & Optoelectronics Progress, 61, 1913007(2024).

[90] Wang T, Liu H Y, Lee A et al. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates[J]. Optics Express, 19, 11381-11386(2011).

[91] Chen S M, Li W, Wu J et al. Electrically pumped continuous-wave III‒V quantum dot lasers on silicon[J]. Nature Photonics, 10, 307-311(2016).

[92] Jung D, Herrick R, Norman J et al. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si[J]. Applied Physics Letters, 112, 153507(2018).

[93] Shang C, Wan Y T, Norman J C et al. Low-threshold epitaxially grown 1.3-μm InAs quantum dot lasers on patterned (001) Si[J]. IEEE Journal of Selected Topics in Quantum Electronics, 25, 1502207(2019).

[94] Kwoen J, Jang B, Lee J et al. All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)[J]. Optics Express, 26, 11568-11576(2018).

[95] Kwoen J, Jang B, Watanabe K et al. High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001)[J]. Optics Express, 27, 2681-2688(2019).

[96] Wei W Q, Wang J H, Zhang B et al. InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm[J]. Applied Physics Letters, 113, 053107(2018).

[97] Wei W Q, Huang J Z, Ji Z T et al. Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation[J]. Journal of Physics D: Applied Physics, 55, 405105(2022).

[98] Wang Y, Chen S M, Yu Y et al. Monolithic quantum-dot distributed feedback laser array on silicon[J]. Optica, 5, 528-533(2018).

[99] Wan Y T, Norman J C, Tong Y Y et al. 1.3 µm quantum dot-distributed feedback lasers directly grown on (001) Si[J]. Laser & Photonics Reviews, 14, 2000037(2020).

[100] Wei W Q, He A, Yang B et al. Monolithic integration of embedded III‒V lasers on SOI[J]. Light: Science & Applications, 12, 84(2023).