Ingot crystalline silicon is one of the important sources for solar-grade crystalline silicon materials. For reducing the cost of silicon wafers, it is necessary to develop large-size ingot crystalline silicon while ensuring the crystal quality. The core parameters that affect the quality of cast crystalline silicon include the ratio of crystal growth rate to temperature gradient at the solidification interface V/G, wall heat flow q, height difference of solidification interface Δh, and temperature difference of silicon melt ΔT. Aiming at the quality control during the growth of ingot crystalline silicon, this study established a process control optimization method based on the artificial neural network (ANN) model for the crystal growth process. A process control data set for the growth process of ingot crystalline silicon was constructed based on the experimental measurement data and numerical simulation results. The opening of the bottom insulation cage and the power ratio of the side and top heaters were used as the main process control parameters, and V/G, |q|, |Δh|, ΔT are the optimization goals. A neural network model for mapping the relationship between process control parameters and thermal field characteristics was established. The influence of the bottom heat insulation cage opening and the power ratio of the side to top heaters on the thermal field during the crystal growth process were analyzed using the trained neural network model. The process control parameters for the ingot crystalline silicon growth process are optimized using genetic algorithm (GA), improving the quality of grown crystal and reducing energy consumption. Finally based on the experimental test images, the influences of V/G on the crystal quality were discussed. Research shows that V/G in the middle stage of crystal growth changes smoothly along the horizontal direction, and the corresponding defects are less and evenly distributed. Therefore, increasing the uniformity of V/G in the horizontal direction is also an important factor to improve the quality of crystal.