Chinese Journal of Lasers, Volume. 51, Issue 7, 0701017(2024)
Design and Fabrication of High‑Efficiency and High‑Power 976 nm Semiconductor Laser Chips
Fig. 1. Calculation and simulation results of refractive index and light field distribution of epitaxial structure
Fig. 3. Influence of reflectivity of anti-reflection film on laser performance parameters at different chip cavity lengths. (a) PCE; (b) threshold current; (c) slope efficiency
Fig. 4. Measured optical power and PCE versus operating current for COS before optimization
Fig. 5. Measured optical power and PCE versus operating current for COS after optimization
Fig. 8. Energy ratios under different slow-axis far-field divergence angles at 23 A current
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Peng Fu, Yanchun Zhang, Tao Zhao, Yongming Zhao, Song Tang, Ying Li, Shendan Han. Design and Fabrication of High‑Efficiency and High‑Power 976 nm Semiconductor Laser Chips[J]. Chinese Journal of Lasers, 2024, 51(7): 0701017
Category: laser devices and laser physics
Received: Aug. 11, 2023
Accepted: Sep. 26, 2023
Published Online: Mar. 29, 2024
The Author Email: Zhao Tao (zthyc@163.com)
CSTR:32183.14.CJL230896