Chinese Journal of Lasers, Volume. 51, Issue 7, 0701017(2024)

Design and Fabrication of High‑Efficiency and High‑Power 976 nm Semiconductor Laser Chips

Peng Fu1, Yanchun Zhang2, Tao Zhao1、*, Yongming Zhao2, Song Tang2, Ying Li2, and Shendan Han1
Author Affiliations
  • 1Guangdong Advanced Technology Institute Co., Ltd., Guangzhou 510535, Guangdong , China
  • 2Dogain Optoelectronic Technology (Suzhou) Co., Ltd., Suzhou 215124, Jiangsu , China
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    Figures & Tables(11)
    Calculation and simulation results of refractive index and light field distribution of epitaxial structure
    Calculated vertical far-field distribution
    Influence of reflectivity of anti-reflection film on laser performance parameters at different chip cavity lengths. (a) PCE; (b) threshold current; (c) slope efficiency
    Measured optical power and PCE versus operating current for COS before optimization
    Measured optical power and PCE versus operating current for COS after optimization
    Power and voltage of device versus current before and after optimization
    Measured far-field distributions of COS when operating current is 23 A
    Energy ratios under different slow-axis far-field divergence angles at 23 A current
    Measured spectrum at 23 A current
    Power record curves in accelerated lifetime test
    • Table 1. Main material parameters of 976 nm epitaxial wafer

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      Table 1. Main material parameters of 976 nm epitaxial wafer

      RegionMaterialThickness /μmDoping concentration /cm-3
      P-capGaAs0.14×1019 for C
      P-claddingAl0.48Ga0.52As1.22×1018 for C
      P-waveguideAl0.18Ga0.82As0.55
      Active regionInGaAs/AlGaAs0.1
      N-waveguideAl0.18Ga0.82As0.55
      N-waveguideAl0.18Ga0.82As0.61×1017 for Si
      N-claddingAl0.22Ga0.78As1.801×1018 for Si
      N-bufferGaAs0.72×1019 for Si
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    Peng Fu, Yanchun Zhang, Tao Zhao, Yongming Zhao, Song Tang, Ying Li, Shendan Han. Design and Fabrication of High‑Efficiency and High‑Power 976 nm Semiconductor Laser Chips[J]. Chinese Journal of Lasers, 2024, 51(7): 0701017

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    Paper Information

    Category: laser devices and laser physics

    Received: Aug. 11, 2023

    Accepted: Sep. 26, 2023

    Published Online: Mar. 29, 2024

    The Author Email: Zhao Tao (zthyc@163.com)

    DOI:10.3788/CJL230896

    CSTR:32183.14.CJL230896

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