Researching | Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures

Journal of Semiconductors, Volume. 46, Issue 4, 042702(2025)

Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures

Mikhail K. Sotnichuk¹, Anton V. Ikonnikov^1、*, Dmitry R. Khokhlov¹, Nikolay N. Mikhailov², Sergey A. Dvoretsky², and Vladimir I. Gavrilenko³

Author Affiliations

¹Faculty of Physics, Lomonosov Moscow State University, Moscow 119991, Russia

²Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia

³Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950, Russia

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Mikhail K. Sotnichuk, Anton V. Ikonnikov, Dmitry R. Khokhlov, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Vladimir I. Gavrilenko. Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures[J]. Journal of Semiconductors, 2025, 46(4): 042702

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Paper Information

Category: Research Articles

Received: Sep. 10, 2024

Accepted: --

Published Online: May. 21, 2025

The Author Email: Anton V. Ikonnikov (AVIkonnikov)

DOI:10.1088/1674-4926/24090023

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laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology