[16] [16] Ding C, Huang M, Zhong G, et al. A design of crucible susceptor for the seeds preservation during a seeded directional solidificationprocess[J]. Journal of Crystal Growth, 2014, 387: 73-80.

[19] [19] Chen J C, Teng Y Y, Wun W T, et al. Numerical simulation of oxygen transport during the CZ silicon crystal growth process[J]. Journal of Crystal Growth, 2011, 318(1): 318-323.

[20] [20] Teng Y Y, Chen J C, Lu C W, et al. Numerical simulation of the effect of heater position on the oxygen concentration in the CZ silicon crystal growth process[J]. International Journal of Photoenergy, 2012: 463-484.

[22] [22] Lee S H, Mun Y H, Kim H. Oxygen content increasing mechanism in Czochralski (CZ) silicon crystals doped with heavy antimony under a double-type heat shield[J]. Journal of Crystal Growth, 2011, 325(1): 27-31.

[23] [23] Takano K, Shirashi Y, Matsubara J, et al. Global simulation of the CZ silicon crystal growth up to 400 mm in diameter[J]. Journal of Crystal Growth, 2001, 229(1-4): 26-30.