Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Acta Physica Sinica, Volume. 68, Issue 17, 178501-1(2019)

Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method

Chen Wang1、*, Yi-Hong Xu2, Cheng Li3, Hai-Jun Lin1, and Ming-Jie Zhao1
Author Affiliations
  • 1Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opti-electronic andCommunication Engineering, Xiamen University of Technology, Xiamen 361024, China
  • 2Department of Electric and Information Engineering, Xiamen Institute of Technology, Xiamen 361024, China
  • 3Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (5)
    Equations (0)
    References (23)
    Tools
    Paper Information
    Topics
    Figures & Tables(5)
    Process flow used for the fabrication of Ge n+/p junction diodes.Ge n+/p结二极管制备工艺流程图

    Fig. 1. Process flow used for the fabrication of Ge n+/p junction diodes. Ge n+/p结二极管制备工艺流程图

    Download full size
    View in Article
    Room temperature I-V characteristics of Ge n+/p junction diode formed by ELA with one pulse at 150 mJ/cm2 with different pre-annealing conditions.150 mJ/cm2激光能量密度不同预退火条件下p-n结二极管的I-V特性曲线

    Fig. 2. Room temperature I-V characteristics of Ge n+/p junction diode formed by ELA with one pulse at 150 mJ/cm2 with different pre-annealing conditions. 150 mJ/cm2激光能量密度不同预退火条件下p-n结二极管的I-V特性曲线

    Download full size
    View in Article
    Change of specific contact resistivity of Al/n+-Ge extracted by CTLM with different annealing conditions. The inset shows the CTLM schematic structure (top view).Al/n+-Ge接触的比接触电阻率随不同退火条件的变化曲线, 内插图是CTLM结构的俯视图

    Fig. 3. Change of specific contact resistivity of Al/n+-Ge extracted by CTLM with different annealing conditions. The inset shows the CTLM schematic structure (top view). Al/n+-Ge接触的比接触电阻率随不同退火条件的变化曲线, 内插图是CTLM结构的俯视图

    Download full size
    View in Article
    (a) Room temperature I-V characteristics of Ge n+/p junction diode; (b) rectification ratio of Ge n+/p junction diodes formed by ELA with or without pre-annealing at 400 ℃-10 min.(a) 不同退火条件下Ge n+/p结二极管的I-V特性曲线; (b) Ge n+/p结二极管的整流比随退火条件变化曲线

    Fig. 4. (a) Room temperature I-V characteristics of Ge n+/p junction diode; (b) rectification ratio of Ge n+/p junction diodes formed by ELA with or without pre-annealing at 400 ℃-10 min. (a) 不同退火条件下Ge n+/p结二极管的I-V特性曲线; (b) Ge n+/p结二极管的整流比随退火条件变化曲线

    Download full size
    View in Article

    • Table 1. Rectification ratio and ideality factor of Ge n+/p junction diodes under different annealing conditions.

      View table
      View in Article

      Table 1. Rectification ratio and ideality factor of Ge n+/p junction diodes under different annealing conditions.

      样品编号退火条件整流比(@ ± 1 V)理想因子
      R1350 ℃-10 min&150 mJ/cm22 × 1051.11
      R2400 ℃-10 min&150 mJ/cm28.35 × 1061.08
      R3400 ℃-30 min&150 mJ/cm21.12 × 102> 2
      R4450 ℃-10 min&150 mJ/cm213> 2
    Tools

    Get Citation

    Copy Citation Text

    Chen Wang, Yi-Hong Xu, Cheng Li, Hai-Jun Lin, Ming-Jie Zhao. Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method [J]. Acta Physica Sinica, 2019, 68(17): 178501-1

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Received: May. 8, 2019

    Accepted: --

    Published Online: Sep. 16, 2020

    The Author Email:

    DOI:10.7498/aps.68.20190699

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology