Infrared Technology, Volume. 43, Issue 1, 56(2021)

Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes

Xiangdong SHI* and Xiaoyan LAI
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  • [in Chinese]
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    References(5)

    [4] [4] Haitz R H. Model for the electrical behavior of microplasma[J]. Journal of Applied Physics, 1964, 35(5): 1370-1376.

    [5] [5] Haitz R H. Mechanisms contributing to the noise pulse rate of avalanche diodes[J]. Journal of Applied Physics, 1965, 36(10): 3123-3131.

    [6] [6] Cova S, Longoni A, Andreoni A. Towards picoseconds resolution with single-photon avalanche diodes[J]. Review of Scientific Instruments, 1981,52(3): 408-412.

    [7] [7] R H Haitz. Model for the electrical behavior of microplasma[J]. Journal of Applied Physics, 1964, 35(5): 1370-1376.

    [8] [8] Tisa S, Zappa F, Tosi A, et al. Electronics for single photon avalanche diode arrays[J]. Sensors and Actuators, 2007, 140(1): 113-122.

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    SHI Xiangdong, LAI Xiaoyan. Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes[J]. Infrared Technology, 2021, 43(1): 56

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    Paper Information

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    Received: May. 6, 2020

    Accepted: --

    Published Online: Apr. 15, 2021

    The Author Email: Xiangdong SHI (326330715@qq.com)

    DOI:

    CSTR:32186.14.

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