Chinese Optics Letters, Volume. 6, Issue 1, 0171(2008)

Growth and characterization of InAs quantum dots with low-density and long emission wavelength

Lin Li, Guojun Liu, Zhanguo Li, Mei Li, and Xiaohua Wang
Author Affiliations
  • National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022
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    CLP Journals

    [1] Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang, "Extremely low density self-assembled InAs/GaAs quantum dots," Chin. Opt. Lett. 6, 443 (2008)

    [2] Yao Jianming, Kong Lingmin, Tu Hua, Wu Zhengyun. Photoluminescence Characteristics of Self-Assembled InAs Quantum Dots Capped with Different Strain Reducing Layer[J]. Acta Optica Sinica, 2009, 29(s1): 156

    [3] Li Zhanguo, Liu Guojun, You Minghui, Li Lin, Li Hui, Feng Ming, Li Mei, Gao Xin, Li Lianhe. Investigation of Ga-Assisted Desorption of Native Surface Oxide on GaAs Substrate[J]. Acta Optica Sinica, 2011, 31(10): 1016003

    [4] Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang, Yi Qu, Baoxue Bo, "Optical properties of 1.3-\mum InAs/GaAs quantum dots grown by metal organic chemical vapor deposition," Chin. Opt. Lett. 7, 08741 (2009)

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    Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang, "Growth and characterization of InAs quantum dots with low-density and long emission wavelength," Chin. Opt. Lett. 6, 0171 (2008)

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    Paper Information

    Received: Mar. 26, 2007

    Accepted: --

    Published Online: Jan. 29, 2008

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