Optoelectronic Technology, Volume. 41, Issue 1, 17(2021)
Research on the Influence of Foreign Gases on the Optoelectronic Properties of Ga0.75Al0.25N Photocathode Surface
Fig. 1. Theoretical model of H2O adsorption on Mg doped Ga0.75Al0.25N(0001) surface
Fig. 2. Diagram of dipole moments of Cs-GaAlN and Cs-residual gas (taking H2O as an example)
Fig. 3. TDOS of Ga0.75Al0.25N(0001) surface and adsorption systems
Fig. 4. PDOS of Ga0.75Al0.25N(0001) surface adsorbed with Cs, CH4 and CO
Fig. 5. Absorption coefficient of clean Ga0.75Al0.25N(0001) surface and adsorption systems
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Yuxuan ZHU, Mingzhu YANG, Siyi HE. Research on the Influence of Foreign Gases on the Optoelectronic Properties of Ga0.75Al0.25N Photocathode Surface[J]. Optoelectronic Technology, 2021, 41(1): 17
Category: Technology and Measurement
Received: Oct. 9, 2020
Accepted: --
Published Online: Jul. 14, 2021
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