Optoelectronic Technology, Volume. 41, Issue 1, 17(2021)

Research on the Influence of Foreign Gases on the Optoelectronic Properties of Ga0.75Al0.25N Photocathode Surface

Yuxuan ZHU, Mingzhu YANG, and Siyi HE
Author Affiliations
  • [in Chinese]
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    Figures & Tables(8)
    Theoretical model of H2O adsorption on Mg doped Ga0.75Al0.25N(0001) surface
    Diagram of dipole moments of Cs-GaAlN and Cs-residual gas (taking H2O as an example)
    TDOS of Ga0.75Al0.25N(0001) surface and adsorption systems
    PDOS of Ga0.75Al0.25N(0001) surface adsorbed with Cs, CH4 and CO
    Absorption coefficient of clean Ga0.75Al0.25N(0001) surface and adsorption systems
    • Table 1. Adsorption energies of different residual gases

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      Table 1. Adsorption energies of different residual gases

      吸附物质H2CH4H2OCOCO2Cs[18]
      吸附能/eV-2.636-2.125-2.224-1.521-2.412-2.035
    • Table 2. Work functions of Ga0.75Al0.25N(0001) surfaces adsorbed with H2, CH4, H2O, CO, CO2, and Cs

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      Table 2. Work functions of Ga0.75Al0.25N(0001) surfaces adsorbed with H2, CH4, H2O, CO, CO2, and Cs

      吸附物H2CH4H2OCOCO2Cs[12]
      功函数/eV4.5864.6734.7354.5744.8422.752
    • Table 3. Work function variation, Mulliken charge, and dipole moments of Ga0.75Al0.25N(0001) surfaces adsorbed with H2, CH4, H2O, CO, CO2, and Cs

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      Table 3. Work function variation, Mulliken charge, and dipole moments of Ga0.75Al0.25N(0001) surfaces adsorbed with H2, CH4, H2O, CO, CO2, and Cs

      吸附物H2CH4H2OCOCO2Cs[18]
      功函数变化/eV+0.226+0.375+0.413+0.214+0.482-1.608
      吸附物的密立根电荷数-0.23-0.15-0.27-0.18-0.260.75
      Pz2.2323.3533.8313.1973.7215.939
      μ/Debye0.8501.4101.5530.8051.8126.046
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    Yuxuan ZHU, Mingzhu YANG, Siyi HE. Research on the Influence of Foreign Gases on the Optoelectronic Properties of Ga0.75Al0.25N Photocathode Surface[J]. Optoelectronic Technology, 2021, 41(1): 17

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    Paper Information

    Category: Technology and Measurement

    Received: Oct. 9, 2020

    Accepted: --

    Published Online: Jul. 14, 2021

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2021.01.003

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