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Journal of Synthetic Crystals, Volume. 51, Issue 7, 1169(2022)

Characterization and First-Principles Calculations of p-Type 4H-SiC Single Crystal Substrates

LUO Dong1, JIA Wei1, WANG Yingmin2, DAI Xin3, JIA Zhigang1, DONG Hailiang1, LI Tianbao4, WANG Lizhong3, and XU Bingshe1
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    LUO Dong, JIA Wei, WANG Yingmin, DAI Xin, JIA Zhigang, DONG Hailiang, LI Tianbao, WANG Lizhong, XU Bingshe. Characterization and First-Principles Calculations of p-Type 4H-SiC Single Crystal Substrates[J]. Journal of Synthetic Crystals, 2022, 51(7): 1169

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    Received: Feb. 25, 2022

    Accepted: --

    Published Online: Aug. 12, 2022

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology