Electronic and optical properties of an intrinsic type-I band alignment ZrS<sub>2</sub>/SnS<sub>2</sub> van der Waals heterostructure for optoelectronic devices

Jimin Shang; Shuai Zhang; Yongqiang Wang; Hongyu Wen; Zhongming Wei

doi:10.3788/COL201917.020010

Chinese Optics Letters, Volume. 17, Issue 2, 020010(2019)

Electronic and optical properties of an intrinsic type-I band alignment ZrS₂/SnS₂ van der Waals heterostructure for optoelectronic devices

Jimin Shang¹, Shuai Zhang², Yongqiang Wang¹, Hongyu Wen^3、*, and Zhongming Wei³

Author Affiliations

¹School of Physics and Electronics Engineering, Zhengzhou University of Light Industry, Zhengzhou 453002, China

²College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China

³State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China

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Cited By

[1] Yanxing Zhang, Zongxian Yang. Efficient band structure engineering and visible-light response in ZrS2/GaS heterobilayer by electrical field or external strains. Physics Letters A(2019).

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Jimin Shang, Shuai Zhang, Yongqiang Wang, Hongyu Wen, Zhongming Wei, "Electronic and optical properties of an intrinsic type-I band alignment ZrS₂/SnS₂ van der Waals heterostructure for optoelectronic devices," Chin. Opt. Lett. 17, 020010 (2019)

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Paper Information

Special Issue: EXTRAORDINARY 2D MATERIALS BASED NANOPHOTONICS

Received: Nov. 27, 2018

Accepted: Dec. 20, 2018

Published Online: Feb. 14, 2019

The Author Email: Hongyu Wen (wenhongyu@semi.ac.cn)

DOI:10.3788/COL201917.020010

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology