Journal of Synthetic Crystals, Volume. 52, Issue 4, 550(2023)

Modeling and Numerical Simulation of Heat-Mass Transport Process for Large-Size Silicon Carbide Crystal Growth

LU Jiazheng1、*, ZHANG Hui2, ZHENG Lili1, and MA Yuan3
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  • 1[in Chinese]
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  • 3[in Chinese]
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    LU Jiazheng, ZHANG Hui, ZHENG Lili, MA Yuan. Modeling and Numerical Simulation of Heat-Mass Transport Process for Large-Size Silicon Carbide Crystal Growth[J]. Journal of Synthetic Crystals, 2023, 52(4): 550

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    Paper Information

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    Received: Dec. 12, 2022

    Accepted: --

    Published Online: Jun. 11, 2023

    The Author Email: Jiazheng LU (lz_2020@foxmail.com)

    DOI:

    CSTR:32186.14.

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