Journal of Synthetic Crystals, Volume. 52, Issue 4, 550(2023)
Modeling and Numerical Simulation of Heat-Mass Transport Process for Large-Size Silicon Carbide Crystal Growth
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LU Jiazheng, ZHANG Hui, ZHENG Lili, MA Yuan. Modeling and Numerical Simulation of Heat-Mass Transport Process for Large-Size Silicon Carbide Crystal Growth[J]. Journal of Synthetic Crystals, 2023, 52(4): 550
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Received: Dec. 12, 2022
Accepted: --
Published Online: Jun. 11, 2023
The Author Email: Jiazheng LU (lz_2020@foxmail.com)
CSTR:32186.14.