Journal of Semiconductors, Volume. 40, Issue 2, 022402(2019)

High performance active image sensor pixel design with circular structure oxide TFT

Rui Geng1 and Yuxin Gong2
Author Affiliations
  • 1School of International Education, Dalian Polytechnic University, Dalian 116034, China
  • 2School of Information Science and Engineering, Shandong University, Jinan 250100, China
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    Figures & Tables(4)
    (Color online) (a) The schematic 3-D views and (b) optical image of the circular a-IGZO TFTs.
    (Color online) The typical measurement results of (a) transfer (IDS–VGS) and (b) output (IDS–VDS) characteristics of the circular a-IGZO TFTs with inner electrode as source and outer electrode as drain (inset is the typical output characteristics of a rectangular TFT).
    The (a) schematic and (b) timing diagram of the proposed active image sensor.
    (Color online) (a) Equivalent circuit, (b) output and gain of the proposed active image sensor pixel with circular a-IGZO TFT.
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    Rui Geng, Yuxin Gong. High performance active image sensor pixel design with circular structure oxide TFT[J]. Journal of Semiconductors, 2019, 40(2): 022402

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    Paper Information

    Category: Articles

    Received: Jul. 16, 2018

    Accepted: --

    Published Online: Sep. 18, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/2/022402

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