Optoelectronic Technology, Volume. 42, Issue 1, 72(2022)

Study on the Digital Low⁃light Level Night Vision Device Technology

Hao WU1, Yuan WU2, Wei WU3, and Shengjiang FANG3
Author Affiliations
  • 1The Military Representative Office of Naval Equipment Department stationed in Wuhu,Wuhu Anhui24000,CHN
  • 2The Third Military Representative Office of Naval Equipment Department stationed in Nanjing,Nanjing 10016,CHN
  • 3The 55th Research Institute of China Electronic Technology Group Corporation,Nanjing 210016,CHN
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    Figures & Tables(11)
    The grades of night illumination conditions
    Photo of Photek PH⁃DS026 ICMOS component
    Comparison of night vision imaging between the two detectors
    Circuit structure of APS and PPS
    The comparison of FSI pix structure and BSI pix structrue
    The comparison of imagings by FSI CMOS and BSI CMOS
    Photo of HAMAMATSU imagEMX2 EMCCD camera
    Sensitivity comparison of luminescence imaging of Hela cells with conventional camera and ImagEX2 camera
    ISIE11 sensor and E5011M module based on ISIE11
    EBCMOS module on night vision helmet and OLED display effect
    • Table 1. Characteristics of the mainstream detectors

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      View in Article

      Table 1. Characteristics of the mainstream detectors

      探测器优点缺点
      CMOS/CCD成本低,体积小,广泛应用于汽车电子和民用安防探测灵敏度低,夜视成像噪声大
      EMCCD高增益,噪声低,广泛应用于生物细胞成像需要制冷,成本高,体积大
      ICCD/ICMOS具有单光子级别的探测灵敏度(光子计数),功耗低,超高速探测,应用于核辐射探测和水下探测分辨率低,成本高,小型化困难
      EBCMOS/EBCCD探测灵敏度高,低功耗,体积小,特别适用于便携式探测领域国内没有形成相应的产品,技术状态属于样品阶段

      sCMOS/

      qCMOS

      超低噪声,具有光子定量探测能力,相对EMCCD具有更好的灵敏度成本高,体积大,部分需要制冷
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    Hao WU, Yuan WU, Wei WU, Shengjiang FANG. Study on the Digital Low⁃light Level Night Vision Device Technology[J]. Optoelectronic Technology, 2022, 42(1): 72

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    Paper Information

    Category: Study Report

    Received: Sep. 30, 2021

    Accepted: --

    Published Online: Aug. 3, 2022

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2022.01.014

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