Chinese Journal of Lasers, Volume. 11, Issue 6, 340(1984)
Influence of heterojunction interface energy gap grade width on characterictic temperature T0 of DH lasers
References(9)
[1] [1] Ν. K. Dutta, Κ. J. Nelson; Appl. Phys. Lett., 1981, 38, No. 6, 407
[2] [2] Υ. Horikoshi, Y. Fuxukawa; Japan. J. Appl. Phys., 1979, 18, No. 4, 809.
[3] [3] G. Η. B. Thompson; Electron Lett;1980, 16, No. 1, 42.
[4] [4] R. J. Nelson et al.; Electron Lett., 1980, 16, No.17, 653.
[5] [5] W. Nijman et al.; IEEE J. Quant. Electr., 1981, QE-17, No. 5, 767.
[6] [6] M. Ettenberg et al.; J. Appl. Phys., 1979, 50, No. 4, 2949.
[7] [7] C. Μ. Garner et al.; J. Appl. Phys., 1979, 50, No. 5, 3383.
[8] [8] D. T. Cheung et al.; Solid-State Electronic, 3975, 18, No. 3, 263.
[9] [9] C. W. Garner et al.; J. Appl. Phys., 1977, 48, No. 7, 3147.
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Wu Kelin. Influence of heterojunction interface energy gap grade width on characterictic temperature T0 of DH lasers[J]. Chinese Journal of Lasers, 1984, 11(6): 340
Paper Information
Category: laser devices and laser physics
Received: Jul. 20, 1983
Accepted: --
Published Online: Sep. 4, 2012
The Author Email:
CSTR:32186.14.
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