Researching | Carbon-based memristors for resistive random access memory and neuromorphic applications

Chip, Volume. 3, Issue 2, 100086(2024)

Carbon-based memristors for resistive random access memory and neuromorphic applications

Fan Yang^1、†, Zhaorui Liu^2、†, Xumin Ding³, Yang Li^4、*, Cong Wang^1、**, and Guozhen Shen^5、***

Author Affiliations

¹School of Electronic and Information Engineering, Harbin Institute of Technology, Harbin 150001, China

²School of Information Science and Engineering, University of Jinan, Jinan 250022, China

³School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150001, China

⁴School of Integrated Circuits, Shandong University, Jinan 250101, China

⁵School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China

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Fan Yang, Zhaorui Liu, Xumin Ding, Yang Li, Cong Wang, Guozhen Shen. Carbon-based memristors for resistive random access memory and neuromorphic applications[J]. Chip, 2024, 3(2): 100086

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Paper Information

Category: Research Articles

Received: Dec. 4, 2023

Accepted: Jan. 28, 2024

Published Online: Jan. 23, 2025

The Author Email: Yang Li (yang.li@sdu.edu.cn), Cong Wang (kevinwang@hit.edu.cn), Guozhen Shen (gzshen@bit.edu.cn)

DOI:10.1016/j.chip.2024.100086

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