Fig. 1. Optical micrographs with the gold film thickness of (a) 3 nm, (b) 6 nm, (c) 8 nm, (d) 10 nm, while the annealing temperature is 570 ℃ and the annealing time is 210 s

Fig. 2. Optical micrographs with the annealing temperature of (a) 500 ℃, (b) 550 ℃, (c) 570 ℃, (d) 600 ℃ while the gold film thickness is 10 nm

Fig. 3. Optical micrographs with the annealing time of (a) 0 s, (b) 180 s, (c) 210 s, (d) 240 s, while the gold film thickness is 10 nm and the annealing temperature is 570 ℃

Fig. 4. SEM images with the annealing time of (a) 0 s, (b) 180 s, (c) 210 s, (d) 240 s, while the gold film thickness is 10 nm and the annealing temperature is 570 ℃

Fig. 5. (a) SEM image and (b) AFM image of the ITO surfaces etched for 4 min, while the annealing time is 240 s

Fig. 6. Transmittance of the ITO with different etching time

Fig. 7. Current density-voltage curves

Fig. 8. Luminance-voltage curves

Fig. 9. Power efficiency-luminance curves

Fig. 10. Current efficiency-luminance curves

Fig. 11. EL spectra