Journal of Infrared and Millimeter Waves, Volume. 43, Issue 2, 174(2024)

Study on crystal quality of materials in Zone I of APD P-I-N HgCdTe

Chuan SHEN, Jing ZHANG, Liao YANG, Hui-Jun GUO, Hao XIE, Mei-Hua ZHOU, Lu CHEN*, and Li HE
Author Affiliations
  • Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
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    References(12)

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    [3] HU Wei-Da, YE Zhen-Hua, LIAO Lei et al. 128×128 long-wavelength / mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk[J]. Optics Letters, 39, 5130-5133(2014).

    [4] HU W D, CHEN X S, YE Z H et al. A bybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density Hydrogen plasma modification[J]. Applied Physics Letters, 99, 091101(2011).

    [5] Baker I, Duncan S, Copley J. A low noise, laser-gated imaging system for long range target identification[J]. Proc. SPIE, 5406, 113-144(2004).

    [6] Reine M B, Marciniec J W, Wong K K et al. HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays[J]. J. Electron. Mater., 36, 1059-1067(2007).

    [7] Finger G, Baker I, Downing et al. Development of HgCdTe large format MBE arrays and noise-free high speed MOVPE EAPD arrays for ground based NIR astronomy[J]. Proc. SPIE, 10563, 1056311(2014).

    [8] GUO Hui-Jun, CHENG Yu-Shun, CHEN Lu et al. The performance of Mid-wave Infrared HgCdTe e-avalanche Photodiodes at SITP[J]. Proc. of SPIE, 11170-111702M(2019).

    [9] LI Xiong-Jun, HAN Fu-Zhang, LI Li-Hua et al. Gain characteristics of MW HgCdTe avalanche photodiodes[J]. J. Infrared Millim. Waves, 38, 175-181(2019).

    [10] SHEN Chuan, YANG Liao, LIU Yang-Rong et al. Numerical simulation of high-operating-temperature MWIR HgCdTe APD detector[J]. J. Infrared Millim. Waves, 40, 576-581(2021).

    [11] LI Q, HE J L, HU W D et al. Influencing sources for dark current transport and avalanche mechanisms in planar and mesa HgCdTe p-i-n electron-avalanche photodiodes[J]. IEEE Transactions on Electron Devices, 65, 572-576(2018).

    [12] YANG Liao, GUO Hui-Jun, SHEN Chuan et al. Modeling and characteristics of MWIR HgCdTe APD at different post-annealing processes[J]. Infrared Physics & Techonology, 127, 104413(2022).

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    Chuan SHEN, Jing ZHANG, Liao YANG, Hui-Jun GUO, Hao XIE, Mei-Hua ZHOU, Lu CHEN, Li HE. Study on crystal quality of materials in Zone I of APD P-I-N HgCdTe[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 174

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    Paper Information

    Category: Research Articles

    Received: Jul. 17, 2023

    Accepted: --

    Published Online: Apr. 29, 2024

    The Author Email: Lu CHEN (chenlu@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2024.02.005

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