Laser & Optoelectronics Progress, Volume. 59, Issue 19, 1900003(2022)
Research Progress on Ge/SiGe Multiple Quantum Well Optical Modulators
Figures & Tables(16)
Fig. 2. QCSE in Ge/SiGe quantum well. (a) Without electric field; (b) with electric field applied
Fig. 3. Epitaxial structure and test results of Ge/SiGe multiple quantum wells. (a) Epitaxial structure; (b) absorption spectra of Ge/SiGe quantum wells[45]
Fig. 5. Side oblique incidence Ge/SiGe multiple quantum well modulator. (a) Absorption spectrum at 100 ℃; (b) schematic diagram of the structure[50]
Fig. 6. Waveguide type Ge/SiGe multiple quantum well electro-absorption modulator. (a) Epitaxial structure; (b) SEM image; (c) absorption spectra at different voltages; (d) extinction ratio at different operating voltages[28]
Fig. 7. Test results of Ge/SiGe multiple quantum wells. (a) Absorption spectrum; (b) extinction ratio at different working voltages[31]
Fig. 8. Absorption spectra of Ge/SiGe multiple quantum wells. (a) Absorption spectra of Ge/SiGe multiple quantum wells with different well widths; (b) absorption spectra of Ge/SiGe multiple quantum wells at different voltages[29]
Fig. 9. Structure and simulation results of low bias voltage Ge/SiGe multiple quantum well electroabsorption modulator. (a) Structural design; (b) TM polarization absorption coefficient; (c) TE polarization absorption contrast at different voltages[51]
Fig. 10. Simulation results of Ge/SiGe multiple quantum well electro-absorption optical modulator. (a) Waveguide structure; (b) overall structure; (c) photocurrent response at different voltages when uniaxial tensile strain is introduced; (d) photocurrent contrast at different voltages[52]
Fig. 11. Structure of the modulator. (a) Epitaxial design of multiple quantum wells; (b) overall structure of the device; (c) distribution of biaxial tensile strain[53]
Fig. 12. Electroabsorption light modulation extinction ratio of the device under different reverse voltages. (a) 0 V/2 V; (b) 0 V/4 V; (c) high frequency response characteristic curve of the device under TE polarization; (d) high frequency response characteristic curve of the device under TM polarization[53]
Fig. 13. Test results of Ge/SiGe multiple quantum wells under different bias voltages. (a) Absorption spectrum; (b) secondary electro-optic coefficient[54]
Fig. 14. Test results of Ge/SiGe asymmetrically coupled multiple quantum wells. (a) FP interference comb spectra at different bias voltages; (b) optical power spectra at different bias voltages; (c) modulation extinction ratios at different operating voltage swings; (d) normalized high-frequency response curve[57]
Table 1. Performance of Ge/SiGe multiple quantum well modulators based on electroabsorption effect
View tableTable 1. Performance of Ge/SiGe multiple quantum well modulators based on electroabsorption effect
Ref. 3 dB modulation bandwidth /GHz Insertion loss /dB Extinction ratio（wavelength） QW structure（thickness） ［ 45 ］‒ ‒ ‒ 10 periods of Ge（10 nm）/Si0.15Ge0.85（16 nm） ［ 48 ］‒ ‒ ‒ Si0.175Ge0.825（5 nm）, Ge QW（12.5 nm） ［ 49 ］‒ ‒ 7.3 dB（1457 nm） 40 periods of Ge（15.5 nm）/Si0.16 Ge0.84（33 nm） ［ 50 ］‒ ‒ 6 dB（1541 nm） 10 periods of Ge（15 nm）/Si0.16 Ge0.84（33 nm） ［ 28 ］23 ‒ 9 dB（1435 nm） ‒ ［ 31 ］‒ ‒ 5 dB（1550 nm） Ge QW（14 nm）18 nm（SiGe barrier thickness） ［ 29 ］‒ ‒ 6 dB（1490 nm） 13.6 nm（QW thickness） ［ 51 ］‒ -7.4 20.3 dB（1550 nm） ‒ ［ 52 ］11.3 ‒ 17.8 dB（1550 nm） ‒ ［ 53 ］8.7 -37.5 9.3 dB（1485 nm） ‒
Table 2. Performance comparison of Ge/SiGe multiple quantum well modulators based on electrorefractive index effect
View tableTable 2. Performance comparison of Ge/SiGe multiple quantum well modulators based on electrorefractive index effect
Ref. 3 dB modulation bandwidth /GHz Insertion loss /dB Extinction ratio（wavelength） QW structure Electrorefractive index（wavelength） ［ 54 ］‒ ‒ ‒ width（100 μm）, length（64 μm） 1.3×10-3（1475 nm） ［ 55 ］‒ ‒ ‒ Ge well（7 nm）, Si0.15Ge0.85 internal barrier（1.5 nm） 2.3×10-3 ［ 56 ］‒ ‒ ‒ ‒ 9×10-3（1461 nm） ［ 57 ］32 ‒ 7.8 dB（1530 nm） ‒ 3.2×10-3（1530 nm）
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Qiang Huang, Yi Zhang, Junqiang Sun, Changliang Yu, Jianfeng Gao, Peilin Jiang, Haotian Shi, Chukun Huang. Research Progress on Ge/SiGe Multiple Quantum Well Optical Modulators[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1900003
Paper Information
Category: Reviews
Received: May. 5, 2022
Accepted: Jun. 13, 2022
Published Online: Sep. 6, 2022
The Author Email: Sun Junqiang (jqsun@mail.hust.edu.cn)
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