Laser & Optoelectronics Progress, Volume. 59, Issue 19, 1900003(2022)
Research Progress on Ge/SiGe Multiple Quantum Well Optical Modulators
Fig. 2. QCSE in Ge/SiGe quantum well. (a) Without electric field; (b) with electric field applied
Fig. 3. Epitaxial structure and test results of Ge/SiGe multiple quantum wells. (a) Epitaxial structure; (b) absorption spectra of Ge/SiGe quantum wells[45]
Fig. 5. Side oblique incidence Ge/SiGe multiple quantum well modulator. (a) Absorption spectrum at 100 ℃; (b) schematic diagram of the structure[50]
Fig. 6. Waveguide type Ge/SiGe multiple quantum well electro-absorption modulator. (a) Epitaxial structure; (b) SEM image; (c) absorption spectra at different voltages; (d) extinction ratio at different operating voltages[28]
Fig. 7. Test results of Ge/SiGe multiple quantum wells. (a) Absorption spectrum; (b) extinction ratio at different working voltages[31]
Fig. 8. Absorption spectra of Ge/SiGe multiple quantum wells. (a) Absorption spectra of Ge/SiGe multiple quantum wells with different well widths; (b) absorption spectra of Ge/SiGe multiple quantum wells at different voltages[29]
Fig. 9. Structure and simulation results of low bias voltage Ge/SiGe multiple quantum well electroabsorption modulator. (a) Structural design; (b) TM polarization absorption coefficient; (c) TE polarization absorption contrast at different voltages[51]
Fig. 10. Simulation results of Ge/SiGe multiple quantum well electro-absorption optical modulator. (a) Waveguide structure; (b) overall structure; (c) photocurrent response at different voltages when uniaxial tensile strain is introduced; (d) photocurrent contrast at different voltages[52]
Fig. 11. Structure of the modulator. (a) Epitaxial design of multiple quantum wells; (b) overall structure of the device; (c) distribution of biaxial tensile strain[53]
Fig. 12. Electroabsorption light modulation extinction ratio of the device under different reverse voltages. (a) 0 V/2 V; (b) 0 V/4 V; (c) high frequency response characteristic curve of the device under TE polarization; (d) high frequency response characteristic curve of the device under TM polarization[53]
Fig. 13. Test results of Ge/SiGe multiple quantum wells under different bias voltages. (a) Absorption spectrum; (b) secondary electro-optic coefficient[54]
Fig. 14. Test results of Ge/SiGe asymmetrically coupled multiple quantum wells. (a) FP interference comb spectra at different bias voltages; (b) optical power spectra at different bias voltages; (c) modulation extinction ratios at different operating voltage swings; (d) normalized high-frequency response curve[57]
|
|
Get Citation
Copy Citation Text
Qiang Huang, Yi Zhang, Junqiang Sun, Changliang Yu, Jianfeng Gao, Peilin Jiang, Haotian Shi, Chukun Huang. Research Progress on Ge/SiGe Multiple Quantum Well Optical Modulators[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1900003
Category: Reviews
Received: May. 5, 2022
Accepted: Jun. 13, 2022
Published Online: Sep. 6, 2022
The Author Email: Sun Junqiang (jqsun@mail.hust.edu.cn)